Nankai University

Taishan Sports Industry Group Co., Ltd.

Jingjun Xu

Yongfa Kong

Guangyin Zhang

Hui Huang

Qian Sun

Qiang Wu

Shaolin Chen

Xinzheng Zhang

Baiquan Tang

Wei Li

Bin Shi

Guangao Li

Dahuai Zheng

Shiguo Liu

Xiaojun Chen

Ziheng Huang

Zhenhua Wang

Zhiyong Bian

Zuojin Sha

Peiming Xu

Haijun Qiao

Irena Drevensek-Olenik

Guoquan Zhang

Yuezhao Qian

Ling Zhang

Yuchen Zhang

Wei Cui

Hongde Liu

A lithium niobate semiconductor structure includes: a first lithium niobate material layer, a second lithium niobate material layer and a third lithium niobate material layer. A polarization direction of a ferroelectric domain of the first lithium niobate material layer is a first direction. The second lithium niobate material layer is spaced apart from the first lithium niobate material layer, and a polarization direction of a ferroelectric domain of the second lithium niobate material layer is the first direction. The third lithium niobate material layer is sandwiched between the first lithium niobate material layer and the second lithium niobate material layer, and a polarization direction of a ferroelectric domain of the third lithium niobate material layer is a second direction; the first direction is opposite to the second direction.

Lithium niobate semiconductor structure and manufacturing method thereof

The method for orientation of liquid crystals in a micro/nano region on the basis of laser direct writing and a system thereof includes a laser direct writing system employed to build a micro/nano structure. Liquid crystal molecules in a micro/nano structural region perform self-orientation; and the orientation of liquid crystals is generated by fine structures on side walls of polymer strips which form the micro/nano structure. The dimension of the micro/nano region varies from the micrometer magnitude to the nanometer magnitude exceeding the diffraction limit. The orientating direction can be adjusted and controlled in the micro/nano region, which is favorable for the miniaturization of the liquid crystal display devices and the orientation of the complicated three-dimensional liquid crystal structure.

Method for orientation of liquid crystals in micro/nano region on basis of laser direct writing and system thereof

A bismuth and magnesium co-doped lithium niobate crystal includes LiCO, NbO, BiOand MgO, wherein the molar ratio of [Li] and [Nb] is 0.90-1.00, the molar percentage of BiOin the mixture is 0.25-0.80%, and the molar percentage of MgO in the mixture is 3.0-7.0%. The bismuth and magnesium co-doped lithium niobate crystal has enhanced photorefraction, improved photorefractive sensitivity, shortened holographic grating saturation writing time, and the photorefractive diffraction efficiency can reach up to 17%. The response time is only 170 ms, when the holographic storage experiment is carried out using 488 nm continuous laser. Therefore, this crystal can be used in the field of holographic imaging.

Bismuth and magnesium co-doped lithium niobate crystal, preparation method thereof and application thereof

This invention relates to the field of materials of the photorefractive crystal. The composition of these crystals is Li Nb O : Fe , M , where M can be magnesium, indium, or zinc; when using q to denote the ion valence of M (q&equals;2 when M is Mg or Zn, and q&equals;3 when M is In), the values of x, y, m, and n are in the range of 0.05&lE;x&lE;0.13, 0.00&lE;y&lE;0.01, 5.0&times;10 &lE;m&lE;7.5&times;10 , and 0.02&lE;qn&lE;0.13. This invention greatly improves the photorefractive properties of LiNbO crystals: makes it have a high diffraction efficiency (more than 68%), a fast response speed for photorefraction (an order of magnitude faster than iron doped LiNbO ), and a high resistance to optical scattering (the light intensity threshold to photorefractive fan scattering near two orders of magnitude larger than LiNbO : Fe). This invention is an excellent three-dimensional optical storage material and has a vast potential market.

Doubly doped lithium niobate crystals

The invention relates to the information storage. It consists of a computer, a precise rotary table, a writing laser source, a readout laser source, a spatial filter, a spatial light modulator, lens, mirrors, photorefractive crystals (such as doubly doped lithium niobate), and a phase-mismatch adjustor; Due to used a green light (532 nm) as the writing light, and a red light (670 nm) as the readout light, the signal-to-noise ratio is improved greatly and the problem of fixing the stored information is solved. The transmission configuration is used to realize the high-density digital storage in which the irregular lens is designed to work as a phase-mismatch adjustor and read out the whole stored image with no distortion and loss. The dynamically differential encoding and decoding technique is used to suppress the bit-error-rate to lower than 10 .

Only-readable three-dimensional optical storage device

Growing community of inventors

Tianjin, China

Jingjun Xu