Applied Materials, Inc.

Apple Inc.

Jingjing Xu

Nitin K Ingle

Anchuan Wang

Daniel William Jarvis

Erik G De Jong

Robert Jan Visser

Sameer Pandya

Paul Choiniere

Jia Liu

Daniel J Barrett

Kiran S Pillai

Elizabeth C Porter

Xuan Liu

Adam J Brinkman

Shang L Tsuei

Jacquelynn M Pok

Abhijit Basu Mallick

David P Thompson

Sawyer Isaac Cohen

Mikhail Korolik

Pravin K Narwankar

Huixiong Dai

Kadthala Ramaya Narendrnath

John J Baker

Fei C Wang

Lin Zhang

Zhen Zhang

Douglas G Fournier

Yaocheng Zhang

Paul U Leutheuser

Patrick M Martin

Izhar Zahoor Ahmed

Ying-Chih Wang

Eric W Bates

Timothy B Michaelson

Joe Griffith Cruz

Hao Dong

Kiran V Thadani

Shaorui Yang

Dakota A Bass

Shaowei Qin

Bulong Wu

Jason C Law

Kikue S Burnham

Isabel S Gueble

Siddharth Avachat

Sarah Trabia

Benjamin R Pope

An electronic device may have a display mounted in a housing. The display may have a display panel with an array of pixels on a flexible substrate. A display cover layer may overlap the display panel. The flexible substrate may have a protruding portion that forms a tail. The tail may be coupled to a printed circuit on which a display driver integrated circuit and/or other circuitry is mounted. When the display is mounted in the housing, the tail may be bent back on itself to create a bend. The bend may be embedded in a molded polymer member. The molded polymer member may be attached to the housing with adhesive and may directly contact an inner surface of the display cover layer.

Electronic devices with molded display mounting structures

An electronic device includes a housing that defines an aperture, and a display assembly positioned in the aperture. The display assembly can include a display layer having a first portion, and a second portion bending at least partially below the first portion. The first portion and the second portion can define a bend volume, and a potting material can be disposed in the bend volume, such that the potting material contacts the first portion and the second portion. An internal enclosure can be contoured to the display assembly.

Display panel bend reinforcement

Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

Methods of selective layer deposition

A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.

Gas-phase silicon nitride selective etch

A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is selectable from about one to several hundred. In all cases, the etch rate of exposed silicon, if present, is negligible. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The additional precursor may be a nitrogen-and-hydrogen-containing precursor such as ammonia.

Gas-phase silicon oxide selective etch

Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon germanium. The plasmas effluents react with exposed surfaces and selectively remove silicon germanium while very slowly removing other exposed materials. Generally speaking, the methods are useful for removing SiGe(including germanium i.e. X=1) faster than SiGe, for all X&#x3e;Y. In some embodiments, the silicon germanium etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Silicon germanium processing

A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

Controlled air gap formation

Growing community of inventors

Cupertino, CA, United States of America

Jingjing Xu