Jinghu Li

Zhang Fan

Hanghui Tu

An Lin

Fujie Chen

Liangqiong Shi

Zhicong Luo

Weitan Yao

Weiyin Zheng

Jianhai Yu

Riqing Chen

Xin Hong

Yuanyuan Zhou

Haofan Ding

A DC-coupled laser driver circuit with large modulation current belongs to the optical field. The present invention solves the problem that the conventional laser driver circuit consumes too much voltage margin because the transistor is used as the tail current source, resulting in a small modulation current. The present invention includes a negative feedback unit, an adaptive drive unit, a mirrored tail current source, a resistor R, a resistor R, a bias current source IBIAS and a diode D; The resistor R, laser D, resistor R, and bias current source IBIAS are connected in series between the voltage VCC and the ground in sequence; the input terminal of the negative feedback unit is connected to the data signal input ports TINP and TINN, the output terminal of the negative feedback unit is connected to the input terminal of the adaptive drive unit, the output terminal of the adaptive drive unit is connected to the control signal input terminal of the mirrored tail current source, a drive signal output terminal of the mirrored tail current source is connected to the anode of the laser Dthrough a diode D, the other drive signal output terminal of the mirrored tail current source is connected to the cathode of the laser D

DC-coupled laser diode driver circuit with large modulation current

A high-speed TIA anti-5G WIFI electromagnetic interference method includes the steps of: stacking a high-voltage capacitor Cand a resistor Rfor constructing a filter circuit on a bare DIE chip of TIA; splitting Cinto two parallel filter capacitors Cand C, which satisfy C=C+C, C=C; constructing differential output to cancel signal interference; constructing electromagnetic interference that cancels out lens leakage by stacking avalanche photodiode APD, Cand gold-plated pad on the vertical axis close to the bare DIE chip, and connecting to the pads through gold wires; stacking Rand Con the vertical axis between pins VDD and VAPD, connecting Rto Cthrough gold wire No. 1, connecting Cto pin VAPD through gold wire No. 2, the gold wire No. 1 and the gold wire No. 2 form a 90° angle to offset the electromagnetic interference leaked by the lens.

High-speed TIA anti-5G WIFI electromagnetic interference method

A 10 G rate OLT terminal transceiver integrated chip based on XGPON and DFB laser includes: a burst mode receiver RX, a continuous mode transmitter TX and a digital control unit DIGIITAL. The burst mode receiver RX amplifies an optical signal from each ONU client into an electrical signal through a burst TIA, processes double-detection for amplitude and frequency of the electrical signal, outputs the signal whose amplitude and waveform pulse width meet the threshold requirements to the host, and uses a fast recovery module to control the timing to meet the XGPON protocol. The continuous mode transmitter TX receives the electrical signal attenuated by the PCB, and selects the bypass BYPASS path or the clock data recovery CDR path according to the degree of attenuation. The digital control unit DIGIITAL is used to provide control signals for the burst mode receiver RX and the continuous mode transmitter TX.

10G rate OLT terminal transceiver integrated chip based on XGPON with DFB laser

An optical receiver chip based on OTN transmission technology to solve the high power consumption and serous signal attenuation problems for data transmission below 100 m in the data center includes a receiver, a digital control unit, and a power module. The receiver includes a 28G transimpedance amplifier and a limiting amplifier, converts a weak optical signal into an electrical signal, process a two-stage amplification, and output the signal in a limited state. The signal is then processed by a photodiode into a DC current RSSI, and judged by the internal received signal strength indicator module or the internal optical modulation amplitude loss of signal module of the limiting amplifier. If the signal does not meet the protocol requirements, the output buffer with de-emphasis and the linear equalizer are turned off, and the judgment result is transmitted to the host computer outside the chip simultaneously.

Optical receiver chip based on OTN transmission technology

A 10G rate OLT terminal transceiver integrated chip based on XGSPON with EML laser includes: a burst mode receiver RX which processes amplitude detection, and outputs the signal whose amplitude and waveform pulse width met the threshold requirements to a host, and comprises a fast recovery module to discharge charges in an AC coupling capacitor to achieve multi-packet transmission without mutual interference and to meet the timing sequence requirement of the XGSPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGIITAL which communicates with the host and provides control signals to the burst mode receiver RX and the continuous mode transmitter TX; and a power module POWER.

10G rate OLT terminal transceiver integrated chip based on XGSPON with EML laser

A 10G rate OLT terminal transceiver integrated chip based on XGPON and EML laser includes: a burst mode receiver RX which amplifies an electrical signal originated each ONU client and processed through a burst mode receiver TIA, processes amplitude and frequency double-detection, and outputs the signal whose amplitude and waveform pulse width met the threshold requirements to a host, and comprises a fast recovery module to meet the timing sequence requirement of the XGPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGIITAL which provides control signals to the burst mode receiver RX and the continuous mode transmitter TX; and a power module POWER to supply working power to the chip.

10G rate OLT terminal transceiver integrated chip based on XGPON with EML laser

A DFB laser DC-coupled output power configuration scheme with adjustable voltage difference. utilizes an external or internal power configuration unit to provide two electric DC power supplies with a fixed voltage difference for the transmitting unit TX of the DFB laser and the optical transceiver integrated chip, and at the same time optimizes the transmitting unit TX. The optimization scheme is that: the transistors in the transmitting unit TX are all low-voltage high-speed tubes, the transmitting unit TX includes a negative capacitance structure composed of capacitors Cand C, serving as an auxiliary structure for improving bandwidth. After optimization, the minimum voltage of the power supply voltage port TVCC of the transmitting unit TX is 2.7V and the problems that the output eye diagram is severely cracked and cannot be used when the traditional DFB laser configuration scheme with an external 3.3V power supply is tested at high temperature are solved.

DFB laser DC-coupled output power configuration scheme with adjustable voltage difference

An optical transmitter chip based on OTN transmission technology, which solves the high bit error rate in existing OTN technology for data transmission below 100 m in the data center, includes a transmitter TX, a digital control unit DIGIITAL, and a power module POWER. The transmitter TX first uses the optical modulation amplitude signal loss module to complete a judgment of an optical modulation amplitude for an attenuated electrical signal transmitted through metal traces on a PCB board. Only if the signal is greater than the preset threshold, an enable signal is output to control a linear equalizer and a laser driver to start, and open a signal transmission path for the chip-driven laser to emit an optical signal. The linear equalizer and the bypass ByPass process signal optimization in two-stage, then the signal is sent to the laser driver to drive the laser to emit an optical signal.

Optical transmitter chip based on OTN transmission technology

A 10G rate OLT terminal transceiver integrated chip based on EPON with EML laser includes: a burst mode receiver RX which processes signal amplification and selects one of the two preset channels as a working channel for output through receiving an external command from a host; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGITAL for path selection of the burst mode receiver RX; and a power module POWER, wherein the opening and closing of the two rate channels are controlled by the level judgment unit and the output blocking unit.

10G rate OLT terminal transceiver integrated chip based on EPON with EML laser

A 10G rate OLT terminal transceiver integrated chip based on XGSPON and DFB laser includes: a burst mode receiver RX which amplifies an optical signal from each ONU client into an electrical signal through a burst transimpedance amplifier TIA, processes amplitude detection, and outputs the signal whose amplitude met the threshold requirements to a host, and comprises a fast recovery module to discharge charges in an AC coupling capacitor to achieve multi-packet transmission without mutual interference, thereby meeting the timing sequence requirement of the XGSPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path for activation according to a degree of attenuation; and a digital control unit DIGIITAL which communicates with the host and provides control signals for the burst mode receiver RX and the continuous mode transmitter TX.

10G rate OLT terminal transceiver integrated chip based on XGSPON with DFB laser

A DFB laser DC-coupled output power configuration scheme belongs to the field of laser drivers in optical communication integrated circuits. The present invention solves the existing problems in the conventional DFB laser power supply configuration scheme. The power configuration scheme of the present invention utilizes an external or internal power configuration unit to provide two electric DC power supplies with a fixed voltage difference for the transmitting unit TX of the DFB laser and the optical transceiver integrated chip, and at the same time optimizes the transmitting unit TX. The optimization scheme is that: the transistors in the transmitting unit TX are all low-voltage high-speed tubes, the transmitting unit TX includes a negative capacitance structure composed of capacitors Cand C, serving as an auxiliary structure for improving bandwidth. After optimization, the minimum voltage of the power supply voltage port TVCC of the transmitting unit TX is 2.7V.

DFB laser DC-coupled output power configuration scheme

A high-speed transimpedance amplifier with bandwidth extension feature over full temperature range and bandwidth extension method belong to the field of integrated circuit. The present invention solves the problem existed in boosting core amplifier bandwidth technology over full temperature range. The present invention includes a preamplifier TIA, a phase splitting stage PS, a pre-driver stage Pre-Drive, an output buffer BUFF and an offset cancelation circuit OC. The preamplifier TIA adopts the gate-drain voltage cancelation technology to expand the bandwidth, so that its &#x2212;3 dB bandwidth is greater than twice the closed-loop bandwidth of the first-order TIA. The pre-driver stage Pre-Drive is used to drive the output buffer BUFF. By adjusting the source-level negative feedback capacitance value of the pre-driver stage Pre-Drive circuit to generate a high-frequency gain that varies with temperature, the preamplifier TIA bandwidth differences under different temperature conditions are compensated.

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Xiamen, China

Jinghu Li