Mediatek Singapore Pte. Ltd.

Jinghao Chen

Zhigang Duan

Chang Liang

Kuei-Ti Chan

Yung-Ching Chen

A semiconductor structure includes a substrate, a first semiconductor die, a second semiconductor die, and a multi-terminal capacitor structure. The substrate includes a wiring structure. The first semiconductor die and the second semiconductor die are disposed over the substrate. The multi-terminal capacitor structure is embedded in the substrate. The multi-terminal capacitor structure includes a first positive terminal and a first ground terminal which are electrically coupled to the first semiconductor die through the wiring structure. The multi-terminal capacitor structure also includes a second positive terminal and a second ground terminal which are electrically coupled to the second semiconductor die through the wiring structure.

Semiconductor structure

A semiconductor structure includes a first substrate having a wiring structure, a first semiconductor die disposed on the first substrate, and a multi-terminal capacitor structure disposed on the first substrate. The multi-terminal capacitor includes a second substrate, an insulating layer disposed over the second substrate, a first multi-terminal capacitor disposed over the insulating layer and electrically coupled to the first semiconductor die through the wiring structure, and a second multi-terminal capacitor disposed over the insulating layer and electrically coupled to the second semiconductor die through the wiring structure, wherein the first multi-terminal capacitor and the second multi-terminal capacitor are electrically isolated from the second substrate.

A semiconductor device includes a first functional block configured to provide a first predetermined function, a second functional block configured to provide a second predetermined function, a first capacitive device, a second capacitive device, a first coupling path, a first switch device and a second switch device. The first capacitive device is disposed physically proximate the first functional block. The second capacitive device is disposed physically proximate the second functional block. The first coupling path includes at least a first connection node connecting to the first functional block. The first switch device is controlled to selectively connect the first capacitive device to the first connection node. The second switch device is controlled to selectively connect the second capacitive device to the second functional block or a second connection node. The second connection node is disposed on the first coupling path and connecting to the first connection node.

Semiconductor devices with flexibility in capacitor design for power noise reduction

A semiconductor device includes a substrate and at least one capacitor element on each of opposite surfaces of the substrate. The at least one capacitor element includes a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate, and a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer.

Semiconductor device with capacitor element

A semiconductor device includes a substrate and at least one capacitor element. The capacitor element is on the substrate. The capacitor element includes a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate; and a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer.

A semiconductor structure includes a first substrate, a first semiconductor die, a second semiconductor die, and a multi-terminal multi-capacitor structure. The first substrate includes a wiring structure. The first semiconductor die and the second semiconductor die are disposed on the first substrate. The multi-terminal multi-capacitor structure is disposed on the first substrate and includes a second substrate, an insulating layer, a first multi-terminal capacitor, and a second multi-terminal capacitor. The insulating layer is disposed over the second substrate. The first multi-terminal capacitor is disposed over the insulating layer and electrically coupled to the first semiconductor die through the wiring structure. The second multi-terminal capacitor is disposed over the insulating layer and electrically coupled to the second semiconductor die through the wiring structure, wherein the first multi-terminal capacitor and the second multi-terminal capacitor are electrically isolated from the second substrate.

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Singapore, Singapore

Jinghao Chen