Xiamen San'an Optoelectronics Co., Ltd

Xiamen Sanan Optoelectronics Technology Co., Ltd.

Jingfeng Bi

Minghui Song

Senlin Li

Zhidong Lin

Guijiang Lin

Liangjun Wang

Weiping Xiong

Jianqing Liu

Duxiang Wang

Chun-Yi Wu

Chaoyu Wu

Jin Wang

Du-Xiang Wang

Wenjun Chen

Chun-I Wu

Chun-Kai Huang

Jie Ding

Zhihao Wu

Shih-Yi Lien

Guanzhou Liu

Mingyang Li

Chih-Hung Hsiao

A light-emitting diode (LED) device includes a first epitaxial layered structure having an upper surface having different first and second regions, a second epitaxial layered structure spaced-apart disposed on the first epitaxial layered structure, a light conversion layer formed on the first region, a bonding unit disposed on the light conversion layer, the bonding unit and the light conversion layer interconnecting the first and second epitaxial layered structures, and an electrically conductive structure formed on the second region and electrically connects the first and second epitaxial layered structures. A method for manufacturing the LED device is also disclosed.

Light emitting diode device and method for manufacturing the same

A light emitting diode includes an n-type confinement layer, a quantum well active layer formed on the n-type confinement layer, a p-type confinement layer formed on the quantum well active layer, a gallium phosphide-based quantum dot structure formed in the p-type confinement layer, and a GaP-based current spreading layer formed on the GaP-based quantum dot structure. A method of manufacturing the light emitting diode is also provided.

Light emitting diode and method of manufacturing the same

A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device

A four-junction quaternary compound solar cell and a method thereof are provided. Forming a first subcell () with a first band gap, a lattice constant matching with the substrate on an InP grown substrate, forming a second subcell () with a second band gap bigger than the first band gap, a lattice constant matching with the substrate on the first subcell, forming a graded buffer layer () with a third band gap bigger than the second band gap on the second subcell, forming a third subcell () with a fourth band gap bigger than the third band gap, a lattice constant smaller than the substrate on the graded buffer layer, forming a fourth subcell () with a fifth band gap bigger than the fourth band gap, a lattice constant matching with the third subcell on the third subcell, and then forming the required four-junction solar cell then by succeeding process including removing the grown substrate, bonding a support substrate, forming electrodes, evaporating an anti-reflect film and so on.

Four-junction quaternary compound solar cell and method thereof

A fabrication method for an inverted solar cell includes: (1) providing a growth substrate; (2) depositing a SiOmask layer over the surface of the growth substrate to form a patterned substrate; (3) forming a sacrificial layer with epitaxial growth over the patterned substrate, wherein the sacrificial layer encompasses the entire SiOmask pattern; (4) forming a buffer layer over the sacrificial layer via epitaxial growth; (5) forming a semiconductor material layer sequence of the inverted solar cell over the buffer layer with epitaxial growth; (6) bonding the semiconductor material layer sequence of the inverted solar cell with a supporting substrate; (7) selectively etching the SiOmask layer by wet etching; and (8) selectively etching the sacrificial layer by wet etching to lift off the growth substrate.

Fabrication method of inverted solar cells

Growing community of inventors

Tianjin, China

Jingfeng Bi