Asm IP Holding B.v.

JinGeun Yu

YoonKi Min

HeeSung Kang

WanGyu Lim

JaeOk Ko

YoungHoon Kim

A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

Growing community of inventors

Cheonan-si, South Korea

JinGeun Yu