Lam Research Corporation

Jingang Yi

Cangshan Xu

Travis R Taylor

Peter Norton

A system and method for in situ measurement and maintenance of preferred pad smoothness in a CMP process is disclosed. The system includes a linear polisher having one or more sensors for detecting fluid pressure, fluid flow or motor current at the linear polisher during a polishing process. A controller receiving the information provided by the sensors includes an algorithm for adjusting the pad conditioning process to achieve a desired pad smoothness based on the sensor data. The method includes obtaining baseline data on preferred linear polisher characteristics associated with desired pad smoothness and using the baseline data to adjust a pad conditioning regimen on a linear polisher to achieve the desired pad smoothness in situ.

System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing

Broadly speaking, a method for controlling a chemical mechanical planarization (CMP) process to obtain a desired result is provided. More specifically, the method incorporates a first neural network to estimate a CMP result and a second neural network to tune CMP control parameters used to obtain the CMP result. The second neural network tunes the CMP control parameters to minimize a difference between the CMP result and a desired CMP result.

Neural network control of chemical mechanical planarization

An end point detection system may compare a production image developed during processing of production semiconductor wafer with a reference image. The reference image is representative of a desired state of processing of the production semiconductor wafer. The reference image is determined by processing a reference semiconductor wafer. The reference semiconductor wafer may be part of a wafer group of similar wafers that includes the production semiconductor wafer. The end point detection system may dynamically develop the production image during processing of the production semiconductor wafer. Indication may be provided by the end point detection system when the reference image and the production image are substantially similar.

End point detection with imaging matching in semiconductor processing

Methods are provided for monitoring and controlling a chemical mechanical planarization (CMP) process. Relationships between motor torques and CMP process parameters are determined and utilized to provide a basis for monitoring and controlling the CMP process. Motor current measurements obtained during the CMP process are converted to motor torques to provide for use of the relationships in monitoring and controlling the CMP process. The motor current measurements and relationships are also used to determine and monitor a coefficient of friction present during the CMP process.

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Albany, CA, United States of America

Jingang Yi