Industrial Technology Research Institute

Jing-Yi Yan

Shu-Tang Yeh

Liang-Hsiang Chen

Jia-Chong Ho

Chen-Wei Lin

Chih-Chieh Hsu

Tarng-Shiang Hu

Kuang-Jung Chen

Yen-Shih Huang

Hsiao-Chiang Yao

Chu-Yin Hung

Cheng-Chung Lee

Yi-Kai Wang

Wei-Han Chen

Tsung-Hsien Lin

Wu-Wei Tsai

Wei-Cheng Kao

Hung-Chien Lin

Hua-Chi Cheng

Wen-Tung Wang

Ming-Chou Chen

Sheng-Wei Chen

King-Yuan Ho

Mei-Ru Lin

Chih-Wei Chu

Jung-Jie Huang

Ping-I Shih

Kung-Yu Cheng

Chen-Yu Chiang

Yen-Yu Wu

Bo-Cheng Kung

Yo-Chi Liang

Xiu Zhang

Chin-Lung Liao

A thin-film device may include a carrier, a release layer, a stacking structure, and a flexible substrate. The release layer may be overlaid on the carrier, and the stacking structure is overlaid on the release layer. The stacking structure may include a first protective layer and a second protective layer, wherein the refractive index of the first protective layer exceeds that of the second protective layer. The flexible substrate may be overlaid on the release layer.

Thin-film device

A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Semiconductor device, capacitor, TFT with improved stability of the active layer and method of manufacturing the same

An environmental sensitive electronic device package including a first substrate, a second substrate, an environmental sensitive electronic device, a side wall barrier structure, a first adhesive, and a second adhesive is provided. The environmental sensitive electronic device is located on the first substrate. The first adhesive is located on the first substrate. The side wall barrier structure is located on the first adhesive, and the side wall barrier structure is adhered to the first substrate through the first adhesive. The second adhesive is located on the side wall barrier structure. The side wall barrier structure is adhered to the second substrate through the second adhesive, and the side wall barrier structure, the first adhesive, and the second adhesive are located between the first substrate and the second substrate. A manufacturing method of an environmental sensitive electronic device package is also provided.

Environmental sensitive electronic device package and manufacturing method thereof

An electronic device including at least one electronic component and a method of manufacturing the same are provided. The electronic device may include a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer, and a first metal layer disposed on the insulating layer. The insulating layer may have a pattern corresponding to a pattern of the semiconductor layer or the first metal layer. The flexible layer has a Young's modulus less than 40 GPa and is disposed on the substrate to encapsulate the semiconductor layer. At least one first opening penetrates the flexible layer. At least one second metal layer is disposed on the flexible layer and in the first opening and electrically connected to the semiconductor layer.

Electronic device and method of manufacturing the same

An electronic component and a method for fabricating the electronic component are provided. The electronic component includes a carrier, a first metal layer, a dielectric layer, a semiconductor layer, a flexible layer, at least one first opening, and at least one second metal layer. The first metal layer is disposed on the carrier. The dielectric layer is disposed on the first metal layer, and has a pattern consistent with a pattern of the dielectric layer. The semiconductor layer is disposed on the dielectric layer. The flexible layer is disposed on the carrier and encapsulates the first metal layer, the dielectric layer and the semiconductor layer. The flexible layer has a Young's modulus less than 40 GPa. The first opening penetrates the flexible layer. The second metal layer is disposed on the flexible layer and in the first opening and is electrically connected with the semiconductor layer.

Electronic component and method for fabricating the same

A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

Semiconductor device structure, method for manufacturing the same and pixel structure using the same

Semiconductor device, TFT, capacitor and method of manufacturing the same

A display system is disclosed. The display system comprises a display device; and a computing device. The computing device executes instructions to receive a first plurality of sub-pixel values of a first plurality of sub-pixels of an image. The first plurality of sub-pixels have a plurality of colors. The computing device further executes instructions to select a first sub-pixel of the first plurality of sub-pixels. The first sub-pixel has a first color and is spatially close to a second sub-pixel of the first plurality of sub-pixels. The second sub-pixel has the first color. The computing device further executes instructions to generate a second plurality of sub-pixel values of a second plurality of sub-pixels based on at least first and second sub-pixel values corresponding to the first and second sub-pixels of the first plurality of sub-pixels.

System and method for improving visual effect of a display device

A double-side light emitting display panel includes a substrate, a plurality of top emission pixel structures and a plurality of bottom emission pixel structures. The top emission pixel structures are disposed on the substrate, and the bottom emission pixel structures are disposed on the substrate. The top emission pixel structures and the bottom emission pixel structures are arranged alternatively on the substrate.

Double-side light emitting display panel

A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.

Transistor and method of fabricating the same

A light emitting device includes a substrate, and a plurality of light emitting structures disposed thereon. Each of the light emitting structures includes an auxiliary electrode disposed on the substrate, a first insulating layer disposed on the substrate and covering the auxiliary electrode, an electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and having a first opening exposing the electrode, an organic light emitting layer disposed in the first opening, a cathode disposed on the organic light emitting layer, at least a conductive structure penetrating through the first insulating layer and the second insulating layer, and a closed ring structure disposed on the second insulating layer and around the cathode, wherein a thickness of the closed ring structure is larger than that of the cathode.

Light emitting device

A fabricating method of a substrate board is provided. The substrate board includes a substrate having rigid areas and flexible areas, and at least an electronic component disposed on the substrate, wherein each of the rigid areas is thicker than the flexible areas. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid areas and the flexible areas may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained.

Fabrication method of substrate

A pixel structure and a pixel circuit having multi-display mediums are provided. A storage capacitor and a first display medium are disposed in different layers, so as to overlap the storage capacitor with a pixel electrode of the first display medium. Accordingly, an area of the first display medium can be increased for enlarging an aperture ratio of the pixel. Furthermore, because a third pixel electrode is disposed in a conductive layer, the third pixel electrode can control/drive a second display medium under a substrate.

Pixel structure and pixel circuit having multi-display mediums

A thin film transistor is provided. The thin film transistor includes a gate, at least an inorganic material layer, at least one dielectric layer, a source, a drain, and an active layer. The active layer is located on the substrate. The source and the drain cover a part of the active layer and a part of the substrate. A channel region exists between the source and the drain. The inorganic material layer is filled into the channel region. The dielectric layer at least including an organic material covers the inorganic material, the source and the drain. The gate is disposed on the dielectric layer.

Thin film transistor

A packaging method of an organic light emitting diode (OLED) is described. First, a substrate is provided, and the substrate has the OLED device formed thereon. Thereafter, at least one protection layer is formed on the substrate, so as to cover the peripheral sidewall of the OLED device entirely. The step of forming the protection layer includes forming an organic layer on the substrate, and then forming a metal layer on the organic layer, wherein the metal layer at least covers a sidewall of the OLED device. Afterwards, an oxidation treatment is performed, so as to oxidize a portion of the metal layer.

Growing community of inventors

Hsinchu County, Taiwan

Jing-Yi Yan