Applied Materials, Inc.

Samsung Electronics Co., Ltd.

Avago Technologies International Sales Pte. Limited

Jing Wu

Anchuan Wang

Young Seen Lee

Xueti Tang

Hemant P Mungekar

Qiang Zou

David A Feld

Andrew Thomas Barfknecht

Robert Chen

Mohamed Abd Allah

Zongliang Cao

Guiti Zolfagharkhani

Siamak Fouladi Azarnaminy

A BAW resonator includes a nonlinear substrate defining a cavity, and an acoustic stack over the cavity, including a bottom electrode, a piezoelectric layer, and a top electrode, where an active region of the acoustic stack includes overlapping portions of the cavity, the bottom electrode, the piezoelectric layer and the top electrode. The BAW resonator further includes a connecting strip extending from a portion of the top electrode for providing electrical excitation of the acoustic stack, where an E-field generated in the BAW resonator begins at the top electrode and terminates at the bottom electrode in response to the electrical excitation. The cavity includes an inner portion in the active region and an extended portion extending from an outer perimeter of the active region underneath the connecting strip. A length of the extended portion are sufficient to substantially prevent portions of the E-field from passing through the substrate.

Acoustic resonator including extended cavity

A method and system for providing a magnetic junction residing on a substrate and usable in a magnetic device are described. The magnetic junction includes a first pinned layer, a first nonmagnetic spacer layer having a first thickness, a free layer, a second nonmagnetic spacer layer having a second thickness greater than the first thickness, and a second pinned layer. The first nonmagnetic spacer layer resides between the pinned layer and the free layer. The first pinned layer resides between the free layer and the substrate. The second nonmagnetic spacer layer is between the free layer and the second pinned layer. Further, the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Method and system for providing inverted dual magnetic tunneling junction elements

The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600&#xb0; C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.

Low wet etch rate silicon nitride film

A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only CHand the additive gas includes Ar.

High stress diamond like carbon film

Growing community of inventors

San Jose, CA, United States of America

Jing Wu