Shanghai Microport Medical (group) Co., Ltd.

Shanghai Huali Microelectronics Corporation

Jing Wen

Grace Ying Yang Jang

Zhijun Cheng

Yongqiang Wei

Zhe Wang

Lei Deng

Jingxun Fang

Wei Zuo

Chuanmin Zhang

Xiaogang Tong

An active bipolar cardiac electrical is assembled by coupling an inner conductor coil to a connector pin to form an inner conductor assembly. The inner conductor assembly is threaded through a connector insulator. An insulating tubing is placed over the inner coil. A proximal end of the insulating tubing is sleeved over the distal extension of the connector insulator. An outer conductor coil is coupled to a ring connector to form an outer conductor assembly. The inner conductor assembly is threaded through the outer conductor assembly. The ring connector is sleeved on the distal extension of the connector insulator and over the insulator tubing. A proximal seal is sleeved over a socket end of the connector pin. The proximal seal is seated on the proximal extension of the connector insulator.

Assembly of active cardiac electrical lead

A passive cardiac electrical lead is assembled by coupling an inner conductor coil to a connector pin to form an inner conductor assembly. The inner conductor assembly is threaded through a connector insulator. An insulator tubing is placed over the inner coil. A proximal end of the insulator tubing is sleeved over the distal extension of the connector insulator. An outer conductor coil is coupled to a ring connector to form an outer conductor assembly. The inner conductor assembly is threaded through the outer conductor assembly. The ring connector is sleeved on the distal extension of the connector insulator and over the insulator tubing. A proximal seal is sleeved over a socket end of the connector pin. A portion of the proximal seal is seated on the proximal extension of the connector insulator.

Assembly of passive cardiac electrical lead

A fabrication method for improving surface planarity after tungsten chemical mechanical polishing (W-CMP) is disclosed. The method forms contact holes and dummy patterns by performing two respective photolithography-and-etching processes to ensure that the dummy patterns have a depth smaller than that of the contact holes. Then the method fills tungsten into the contact holes and dummy patterns and removes the redundant tungsten by a W-CMP process. With such a method, difference of wiring density between areas can be reduced by the dummy patterns, and hence a better surface planarity of the contact hole layer can be achieved. Besides, as the dummy patterns are formed in a pre-metal dielectric layer and their depth is well controlled, tungsten filled in the dummy patterns will not contact with the device area below the pre-metal dielectric layer, and thus will not affect the performance of the device.

Fabrication method for improving surface planarity after tungsten chemical mechanical polishing

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Shanghai, China

Jing Wen