Texas Instruments Corporation

Jing Shing Shu

Mehrdad M Moslehi

Cecil J Davis

Isamu Asano

Robert Yung-Hsi Tsu

Ming J Hwang

Jeffrey A McKee

Ming-Jang Hwang

Peter S Ying

Toyotaro Horiuchi

This is a curing method of low-k dielectric material in a semiconductor device and system for such. The method may comprise: depositing metal interconnection lines; depositing the low-k dielectric material layer over the lines; and curing the low-k dielectric material layer with a heating lamp for less than 10 minutes, wherein the heating lamp provides optical radiation energy in the infrared spectral range of about 1 micron to 3.5 microns in wavelength. The heating lamp may be a tungsten-halogen lamp.

High throughput optical curing process for semiconductor device

A self-aligned multiple crown storage cell structure 10 for use in a semiconductor memory device and method of formation that provide a storage capacitor with increased capacitance. A double crown storage cell structure embodiment 10 can be formed by patterning a contact via 18 into a planarized base layer that can include an insulating layer 12, an etch stop layer 14, and a hard mask layer 16, depositing a first conductive layer 20, etching the first conductive layer 20, etching the hard mask layer 16, depositing a second conductive layer 24 onto the conductive material-coated patterned via 18 and the etch stop layer 14, depositing a sacrificial (oxide) layer 26 onto the second conductive layer 24, etching the sacrificial layer 26, depositing a third conductive layer 28, and etching conductive material and the remaining sacrificial layer 26. The last several steps can be repeated to form a storage cell structure 10 with three or more crowns.

Self-aligned multiple crown storage capacitor and method of formation

This is a system and method of in-situ coating, baking and curing of dielectric material. The system may include: dispensing apparatus for dispensing spin-on material; a lamp module 50; a window 54 connected to the lamp module 50; an environmental control chamber 56 connected to the window 54; an access gate 60 for wafers 58 in the environmental control chamber 56; a spin chuck 62 inside the environmental control chamber 56; and an exhaust pipe 64 connected to the environmental control chamber 56. The lamp module 50 may contains infra red and ultra violet lamps. In addition, the coating chamber may process dielectric material such as spin-on glass, silicon dioxide and various other spin-on material.

In-situ coat, bake and cure of dielectric material processing system for

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Richardson, TX, United States of America

Jing Shing Shu