Texas Instruments Corporation

Jing-Shing Shu

Jeffrey A McKee

Troy H Herndon

Michael P Keleher

Anthony Yen

A mask ( ) includes a pattern ( ) having a plurality of substantially rectangular shapes ( ) arranged longitudinally in each of a plurality of substantially parallel rows ( ). The rows ( ) are evenly spaced apart from each other. The substantially rectangular shapes ( ) in each row ( ) are evenly spaced apart from each other and offset from the substantially rectangular shapes ( ) in neighboring rows ( ). The substantially rectangular shapes ( ) define a plurality of T-shapes ( ) connected to and offset from each other.

Mask and method for forming dynamic random access memory (DRAM) contacts

A mask (,) includes a pattern (,) having a plurality of substantially rectangular shapes (,) arranged longitudinally in each of a plurality of substantially parallel rows (,). The rows (,) are evenly spaced apart from each other. The substantially rectangular shapes (,) in each row (,) are evenly spaced apart from each other and offset from the substantially rectangular shapes (,) in neighboring rows (,). The substantially rectangular shapes (,) define a plurality of T-shapes (,) connected to and offset from each other.

An improved microlithographic imaging system (100) is disclosed. The system comprises a filter (183) substantially aligned with a first image plane, adjacent to an aperture (185). The filter is formed in response to an image projected by a light source (110) through a reticle (160) onto the first image plane. The improved microlithographic imaging system has higher resolution and depth of focus than prior art imaging systems, due to the additional filtering performed by the filter (183). A filter in accordance with the invention can be fabricated easily and inexpensively, using conventional microlithography techniques. A filter in accordance with the invention can also be used to detect or correct flaws in the reticle (160).

Method and system for improved optical imaging in microlithography

A feature (24) of a semiconductor device (10) is formed in a photoresist (14). To accurately measure a dimension (26) of the feature (24), portions of the photoresist (14) are removed to provide a reduced thickness (34) of the photoresist (14). The ratio between the reduced thickness (34) and the dimension (26) allows for more accurate dimension measurement of the feature (24) of the semiconductor device (10).

Growing community of inventors

Richardson, TX, United States of America

Jing-Shing Shu