Motorola Corporation

University of Utah Research Foundation

Jing Shi

Eugene Youjun Chen

Saied N Tehrani

Jon Michael Slaughter

Theodore Zhu

Mark A Durlam

Valy Vardeny

The spacer in a spin-valve is replaced with an organic layer, allowing for numerous applications, including light-emitting structures. The invention demonstrates that the spin coherence of the organic material is sufficiently long that the carriers do not lose their spin memory even in traversing a thicker passive barrier. At least three methods to fabricate the organic spin-valve devices are disclosed, in which the difficulties associated with depositing the ferromagnetic (FM) and organic layers are addressed.

Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes

An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element ( ) including a first electrode ( ) , a second electrode ( ) and a spacer layer ( ). The first electrode ( ) includes a fixed ferromagnetic layer ( ) having a thickness t . A second electrode ( ) is included and comprises a free ferromagnetic layer ( ) having a thickness t . A spacer layer ( ) is located between the fixed ferromagnetic layer ( ) and the free ferromagnetic ( ) layer, the spacer layer ( ) having a thickness t , where 0.25t <t <2t , thereby producing near zero magnetic field at the free ferromagnetic layer ( ).

Magnetic element with improved field response and fabricating method thereof

An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element (,) including a first electrode (,), a second electrode (,) and a spacer layer (,). The first electrode (14) includes a fixed ferromagnetic layer (,) having a thickness t,. A second electrode (,) is included and comprises a free ferromagnetic layer (,) having a thickness t,. A spacer layer (,) is located between the fixed ferromagnetic layer (,) and the free ferromagnetic (,) layer, the spacer layer (,) having a thickness t,, where 0.25t,<t,<2t,, thereby producing near zero magnetic field at the free ferromagnetic layer (,).

A magnetic memory cell (,) has a semiconductor layer (,) positioned between first (,) and second (,) ferromagnetic layers forming either a p-n or Schottky junction. A magnetic layer (,) is positioned between the first ferromagnetic layer and a digit line (first) for pinning a magnetic vector within the second ferromagnetic layer. In a,embodiment, a gate contact (,) is spaced apart from the layer of semiconductor material for controlling the electron flow through the semiconductor layer.

MRAM having semiconductor device integrated therein

An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (,) including a first electrode (,), a second electrode (,) and a spacer layer (,). The first electrode (,) includes a fixed ferromagnetic layer (,). A second electrode (,) is included and comprises a free ferromagnetic layer (,). A spacer layer (,) is located between the fixed ferromagnetic layer (,) and the free ferromagnetic (,) layer, the spacer layer (,). At least one additional layer (,&,) is provided between the base metal layer (,) and the spacer layer (,). The base metal layer (,) or at least one of the layers positioned between the base metal layer (,) and the spacer layer (,) having an x-ray amorphous structure such that a reduced topological coupling strength between the free ferromagnetic layer (,) and the fixed ferromagnetic layer (,) is achieved.

A method of writing/reading an array of magnetoresistive cells, with each cell in the array having associated therewith a first current line that generates an easy axis field and a second orthogonal current line that generates a hard axis field when current is applied thereto. The method includes initially applying a current to the second orthogonal current lines in a first direction that generates a hard axis field to switch end domains in all cells in the array to a fixed direction, and selecting a cell in the array for write/read using a half-select technique including supplying a half-select current to the first current line associated with the selected cell to generate a half-select easy axis field and, simultaneously, supplying a half-select current in the first direction to the second current line associated with the selected cell to generate a half-select hard axis field.

Method to write/read MRAM arrays

A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.

Low aspect ratio magnetoresistive tunneling junction

First and second layers of magnetic material are stacked in parallel, overlying relationship and separated by a first layer of non-magnetic material sandwiched therebetween to form a magnetic memory cell. A layer of oxide (e.g. NiO) is positioned on either one or both major surfaces of the magnetic memory cell. The oxide has a thickness (e.g. less than approximately 150 .ANG.) which prevents the layer of oxide from pinning the first and second layers of magnetic material and adapts the layer of oxide to the first and second layers of magnetic material so as to increase the GMR ratio of the magnetic memory cell.

Magnetic memory cell with increased GMR ratio

A multi-layer magnetic memory cell is provided, with magnetic vectors aligned along a length of the cell. To align the magnetic end vectors, an ellipsoidal shape is formed at the ends of the memory cell. Magnetic vectors aligned along the length prevent from forming high fields and magnetic poles at the discontinuity or ends of the layers. The memory cell with the ellipsoidal shape shows a constant magnetic resistance of the magnetic cell when a magnetic field is applied to the cell and attains a reduction of power consumption for the magnetic cell.

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Salt Lake City, UT, United States of America

Jing Shi