Shanghai Hua Hong Nec Electronics Company, Limited

Huawei Technologies Co., Limited

Alcatel Lucent

Chinese Academy of Sciences

Topharman Shanghai Co., Ltd.

Jing Shi

Jun Hu

Wensheng Qian

Donghua Liu

Wenting Duan

Guosheng Pu

Yan Zhao

Fan Chen

Qinglin Luo

Zhen Shen

Zheng Liu

Jingshan Shen

Jianfeng Li

Tzuyin Chiu

Ye Li

Masaru Ichikawa

Xiaoliang Du

Jin Zheng

Haihong Li

Fanghai Xu

Yanlin Song

Yongjun Mao

Kai Xie

Meng Zou

Dongchun Qiao

Embodiments of this application provide a dielectric filter and a communication device. The dielectric filter includes: a dielectric body, a first blind via and a second blind via that are provided in the dielectric body, a through hole located between the first blind via and the second blind via, and an insulating portion, where inner walls of the first blind via, the second blind via, and the through hole each are covered with a metal layer, and an outer surface of the dielectric body is covered with a metal layer; and the insulating portion is implemented by not covering a metal layer on a surface of the dielectric body, and the insulating portion partially surrounds the through hole.

Dielectric filter and communication device

Embodiments of this application disclose a dielectric filter and a communication device. In one example, the dielectric filter includes: a first dielectric block and a second dielectric block that are stacked up, where a first surface of the first dielectric block is opposite to a second surface of the second dielectric block; a first blind hole, a first through hole, and two or more resonance through holes whose openings are located on the first surface of the first dielectric block, and a second through hole whose opening is located on the second surface of the second dielectric block. A metal layer on the first surface of the first dielectric block is connected to a metal layer on the second surface of the second dielectric block.

This application provides a dielectric resonator, including a dielectric body disposed in a hollow conductive housing, where the dielectric body includes a first end face and a second end face that are disposed opposite to each other and a circumferential surface connected between the first end face and the second end face. The first end face is provided with a first groove, the second end face is provided with a second groove, the first end face and the second end face are in contact with an inner wall of the conductive housing, and extension directions of the first groove and the second groove are different. This application further provides a filter. This application can implement single-sided installation of the dielectric resonator, so that an objective of miniaturization is achieved and assembly becomes easy. In addition, coupling between resonance modes can be enhanced because the extension directions of the first groove and the second groove are different.

Dielectric resonator and filter

This application relates to components of communications devices, and in particular, to a dielectric resonator and a dielectric filter, a transceiver, and a base station to which the dielectric resonator is applied. Embodiments of this application provide a dielectric resonator and a dielectric filter, a transceiver, and a base station to which the dielectric resonator is applied. The dielectric resonator includes a metal cavity and a dielectric block that is disposed in the metal cavity and that is made from a solid-state dielectric material; where sizes of the dielectric block meet c&#x3c;b&#x3c;a, where a, b, and c are respectively the sizes of the dielectric block in three dimensions in a three-dimensional coordinate system; a hole is disposed on the dielectric block; and a surface of the dielectric block is not metalized and is not in contact with the metal cavity.

Dielectric resonator and dielectric filter, transceiver, and base station to which dielectric resonator is applied

The present application provides a dielectric filter, including a body part, a dielectric resonator, a cavity is formed in the body part, and a support kit is disposed at a bottom of the cavity. The dielectric resonator, including a dielectric body and at least two adjusting holes disposed on the dielectric body, is contained in the cavity and is disposed on the support kit. The dielectric body has a first mirror plane and a second mirror plane, which are perpendicular to each other and penetrate through the top plane and the bottom plane of the dielectric body, and any two of the at least two adjusting holes are not mirror symmetric relative to the first mirror plane or the second mirror plane.

Dielectric resonator and dielectric filter

The present invention provides a method and device for calibrating antenna reciprocity via OTA in a base station of wireless network, and the method comprises: determining, based on a predefined rule, a plurality of calibrating UEs out of a plurality of UEs, and antennas, to be calibrated by the plurality of calibrating UEs, of the plurality of base stations, wherein the plurality of calibrating UEs are configured to calibrate antennas of the plurality of base stations; and calibrating, according to the determined calibration relationship, the antennas reciprocity of the plurality of base stations based on the plurality of calibrating UEs. With the method of present invention, communication channel model can be calibrated effectively so as to enhance antenna reciprocity in CoMP scenario.

Method for calibrating antenna reciprocity in a base station of wireless network and a device thereof

The present invention provides a method and a device for selecting user terminal so as to enhance calibration for reciprocity error between uplink and downlink, in the purpose of enhancing the accuracy of calibration for reciprocity error between uplink and downlink in TDD system. Wherein, the method comprises the following steps: obtaining channel quality related information between a plurality of first user terminals and a first base station, wherein said channel quality related information is used for indicating channel qualities between said plurality of first user terminals and said first base station; selecting, at least one first user terminal as a calibration user terminal for calibrating said reciprocity error between uplink and downlink, according to said channel quality related information.

Method and device for selecting user terminal so as to enhance reciprocity error calibration between uplink and downlink

A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.

SiGe HBT and method of manufacturing the same

A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, including: a substrate; two field oxide regions formed in the substrate; two pseudo buried layers, each being formed under a corresponding one of the field oxide regions; a collector region formed between the field oxide regions, the collector region laterally extending under a corresponding one of the field oxide regions and each side of the collector region being connected with a corresponding one of the pseudo buried layers; a matching layer formed under both the pseudo buried layers and the collector region; and two deep hole electrodes, each being formed in a corresponding one of the field oxide regions, the deep hole electrodes being connected to the corresponding ones of the pseudo buried layers for picking up the collector region. A manufacturing method of the SiGe HBT is also disclosed.

Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof

A zener diode in a SiGe BiCMOS process is disclosed. An N-type region of the zener diode is formed in an active region and surrounded by an N-deep well. A pseudo buried layer is formed under each of the shallow trench field oxide regions on a corresponding side of the active region, and the N-type region is connected to the pseudo buried layers via the N-deep well. The N-type region has its electrode picked up by deep hole contacts. A P-type region of the zener diode is formed of a P-type ion implanted region in the active region. The P-type region is situated above and in contact with the N-type region, and has a doping concentration greater than that of the N-type region. The P-type region has its electrode picked up by metal contact. A method of fabricating zener diode in a SiGe BiCMOS process is also disclosed.

Zener diode in a SiGe BiCMOS process and method of fabricating the same

A high-speed SiGe HBT is disclosed, which includes: a substrate; STIs formed in the substrate; a collector region formed beneath the substrate surface and located between the STIs; an epitaxial dielectric layer including two portions, one being located on the collector region, the other being located on one of the STIs; a base region formed both in a region between and on surfaces of the two portions of the epitaxial dielectric layer; an emitter dielectric layer including two portions, both portions being formed on the base region; an emitter region formed both in a region between and on surfaces of the two portions of the emitter dielectric layer; a contact hole formed on a surface of each of the base region, the emitter region and the collector region. A method of manufacturing high-speed SiGe HBT is also disclosed.

High speed SiGe HBT and manufacturing method thereof

A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) device that includes a substrate; a buried oxide layer near a bottom of the substrate; a collector region above and in contact with the buried oxide layer; a field oxide region on each side of the collector region; a pseudo buried layer under each field oxide region and in contact with the collector region; and a through region under and in contact with the buried oxide layer. A method for manufacturing a SiGe HBT device is also disclosed. The SiGe HBT device can isolate noise from the bottom portion of the substrate and hence can improve the intrinsic noise performance of the device at high frequencies.

SiGe HBT device and manufacturing method of the same

An ultra-high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), which includes: a P-type substrate; an N-type matching layer, a P-type matching layer and an N&#x2212; collector region stacked on the P-type substrate from bottom up; two field oxide regions separately formed in the N&#x2212; collector region; N+ pseudo buried layers, each under a corresponding one of the field oxide regions and in contact with each of the N-type matching layer, the P-type matching layer and the N&#x2212; collector region; an N+ collector region between the two field oxide regions and through the N&#x2212; collector region and the P-type matching layer and extending into the N-type matching layer; and deep hole electrodes, each in a corresponding one of the field oxide regions and in contact with a corresponding one of the N+ pseudo buried layers. A method of fabricating an ultra-high voltage SiGe HBT is also disclosed.

Ultra-high voltage SIGE HBT device and manufacturing method of the same

An ultra high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, in which, a collector region is formed between two isolation structures; a pseudo buried layer is formed under each isolation structure and each side of the collector region is connected with a corresponding pseudo buried layer; a SiGe field plate is formed on each of the isolation structures; each pseudo buried layer is picked up by a first contact hole electrode and each SiGe field plate is picked up by a second contact hole electrode; and each first contact hole electrode is connected to its adjacent second contact hole electrode and the two contact hole electrodes jointly serve as an emitter. A manufacturing method of the ultra high voltage SiGe HBT is also disclosed.

Ultra high voltage SiGe HBT and manufacturing method thereof

The present invention relates to a method for preparing 6-substituted amino-3-cyanoquinoline compounds (compound A for short) and the intermediates thereof, more particularly, to a compound of the following formula (I), the preparation method thereof, the intermediates thereof and use thereof for preparing the compound A. The compound of the formula (I) is cyclized in the presence of an alkali to give a compound of formula A, wherein W is OH; or the compound of the formula (I) is cyclized in the presence of an alkali, and then chlorinated to give a compound of the formula A, wherein W is Cl. Compared with the known methods in the literature, the method for preparing the compound A from the compound of formula (I) according to the present invention can avoid using high-temperature condition and high boiling point solvents, and is safe and environment-friendly, mild in reaction condition, easy in operation with a high yield and high product purity. 

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Shanghai, China

Jing Shi