Freescale Semiconductor,inc.

The University of Texas System

Ionis Pharmaceuticals, Inc.

Jing Liu

Eric E Swayze

Bich-Yen Nguyen

Thazha P Prakash

Voon-Yew Thean

Ted R White

Da Zhang

David R Corey

Jiaxin Hu

Dongbo Yu

Described are compounds and methods useful for the treatment and investigation of diseases and disorders associated with expanded repeat-containing RNA molecules. In certain embodiments, compounds and methods useful for the modulation of ATXN-3 pre-mRNA are described. In certain embodiments, compounds and methods useful for the modulation of ATN-1 mRNA are described.

Methods and compounds useful in conditions related to repeat expansion

A semiconductor fabrication process includes forming a gate electrode () overlying a gate dielectric () overlying a semiconductor substrate (). First spacers () are formed on sidewalls of the gate electrode (). First s/d trenches () are formed in the substrate () using the gate electrode () and first spacers () as a mask. The first s/d trenches () are filled with a first s/d structure (). Second spacers () are formed on the gate electrode () sidewalls adjacent the first spacers (). Second s/d trenches () are formed in the substrate () using the gate electrode () and the second spacers () as a mask. The second s/d trenches () are filled with a second s/d structure (). Filling the first and second s/d trenches () preferably includes growing the s/d structures using an epitaxial process. The s/d structures () may be stress inducing structures such as silicon germanium for PMOS transistors and silicon carbon for NMOS transistors.

Transistor fabrication using double etch/refill process

Growing community of inventors

Austin, TX, United States of America

Jing Liu