Dow Global Technolgoies LLC

Newsouth Innovations Pty Limited

Suntech Power International Ltd.

Jing Ji

Jianhai Mu

Cheng Shen

Ling Zhong

Stuart Ross Wenham

Alison Maree Wenham

Alison Joan Lennon

Valantis Vais

Qi Jiang

Wei Lu

Yan Li

Xue Chen

Felipe A Donate

Peng Gao

Xin Jiang

Dong Yun

Hua Ren

Ly Mai

Zhengrong Shi

Rebecca J Wachowicz

Xiaohua Wang

Budi Tjahjono

Jacob Crosthwaite

Ziv Hameiri

Xi Wang

Kazuyuki Hasegawa

Jingnan Tong

A coated seed comprises a seed, and a coating composition coated on the seed comprising a polar polyolefin dispersion, which comprises: 1) a polar polyolefin; and 2) a neutralizing base; wherein the polar polyolefin is an olefin copolymer that contains one or more polar groups, wherein the polar groups are selected from the group consisting of a carboxylic acid group, a carboxylic acid anhydride group or a carboxylic acid salt moiety; wherein the neutralizing base is abase that modifies at least a portion of the carboxylic acid group, carboxylic acid anhydride group or carboxylic acid salt moiety of the polymer to form a stable aqueous dispersion with the polar polyolefin.

Polar polyolefin dispersion based seed coating composition

A freeze-thaw stabilizer additive composition including (a) at least one anti-freezing agent; and (b) at least one emulsifier; and (c) any other desired optional compound; a process for making the above freeze-thaw stabilizer additive composition, a paint formulation made containing the above freeze-thaw stabilizer additive composition; and a process for making the above paint formulation.

Freeze thaw additive composition

An aqueous coating compositions including a coalescent represented by Formula I: R&#x2014;O&#x2014;(A)&#x2014;R, where Ris hydrogen, a C-Clinear aliphatic, or a C-Cbranchedaliphatic, A is an alkylene oxide, Ris a hydrogen group, a C-Clinear aliphatic or branched aliphatic group, a C-Clinear or branched carbonyl group, or a benzyl group, and n has an average value from 3 to 25.

Aqueous coating compositions

Embodiments of the present invention relate to aqueous coating compositions and to methods for improving the freeze/thaw stability of aqueous coating compositions. In one aspect, an aqueous coating composition comprises an aqueous polymeric dispersion and a compound according to Formula (1) as described herein.

Aqueous coating compositions and methods for improving the freeze/thaw stability of aqueous coating compositions

A prepolymer comprising acid functionality is made by a process comprising the step of contacting: (i) a di-isocyanate, (ii) a polyol containing an acid group, (iii) a polyol without an acid group, and (iv) a metal salt catalyst, the contacting conducted under reaction conditions and in a solvent consisting essentially of: (A) a dialkyl amide, and (B) optionally, an aprotic glycol ether. The prepolymer is useful in the preparation of water-based polyurethane dispersions, and certain of the solvent blends consisting essentially of a dialkyl amide and an optional aprotic glycol ether are azeotropic or pseudo-azeotropic.

Water-based polyurethane dispersions and their preparation

A defoaming adjuvant comprises a solid particulate carrier and a polyalkylene glycol adsorbed on to the solid particulate carrier, where the polyalkylene glycol is a reaction product of an alkyl alcohol initiator with 1,2-butylene oxide and, optionally, propylene oxide.

Solid adjuvant defoamer

A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating. The anti-reflection coating is located on a light receiving surface of the semiconductor material structure and comprises a thin layer of thermal expansion mismatch correction material having a thermal expansion coefficient less than or equal to that of the semiconductor material, to provide thermal expansion coefficient mismatch correction. An anti-reflection layer is provided having a refractive index and thickness selected to match the semiconductor material structure so as to give good overall antireflection properties to the solar cell.

Photovoltaic device structure and method

A defoaming adjuvant comprises a solid particulate carrier and a polyalkylene glycol adsorbed on to the solid particulate carrier, where the polyalkylene glycol is a reaction product of an alkyl alcohol initiator with 1, 2-butylene oxide and, optionally, propylene oxide.

A process for scouring textile materials is provided. The process comprising contacting the textile material with scouring textile materials, comprising contacting the textile materials with a composition comprising an alkyl alkoxylate sulfate of formula I, a nonionic alkyl alkoxylate of formula II, and water.

Ape-free surfactant compositions and use thereof in textile applications

A formulation contains (a) 1-20 wt % of indoxacarb; (b) 10-30 wt % of a primary emulsifier mixture containing: (i) 1-15 wt % of a polyalkylene glycol having the following structure : RO&#x2014;(CHCH(CH)&#x2014;O)&#x2014;(CHCHO)&#x2014;H where Ris a branched or linear alkyl having 4-16 carbons; x is a number from 0-11 and y is a number from 1-20; (ii) 5-15 wt % of an ethylene oxide/propylene oxide block copolymer hydroxyl terminated on both ends and having a molecular weight of 2000 to 8000 g/mol and an ethylene oxide moiety that is 40-60 wt % of total copolymer weight; and (iii) 1-10 wt % of sodium bisulfate adduct of bis (2-ethylhexyl) maleate; (c) 1-15 wt % of a non-aromatic methyl ester co-emulsifier; and (d) 10-70 wt % of a solvent consisting of cyclohexanone and at least one additional non-aromatic solvent; where the composition is fiee of aromatic solvents, amides, silicone containing components and azone.

Emulsifiable concentrates of indoxacarb

The present disclosure relates generally to insecticide formulations. The present disclosure relates more particularly to aqueous pymetrozine formulations that can be provided in concentrate form and methods for making them. In one aspect, the disclosure provides a composition including pymetrozine in particulate form; a first polymeric dispersing agent, the first polymeric dispersing agent being a copolymer of (a) a maleic acid monomer and (b) a hydrophobic monomer; and a second polymeric dispersing agent, the second polymeric dispersing agent being a copolymer of (a) a (meth)acrylic acid monomer, an ethylenically unsaturated dicarboxylic acid monomer or a combination thereof, (b) a (meth)acrylamido alkyl or aryl sulfonate monomer; and (c) a third monomer selected from one or more of vinylic compounds, (meth)acrylic esters, vinyl acetate, and substituted (meth)acrylamides.

Pymetrozine suspension concentrates and its preparation method

A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidizing the exposed surface to form an oxide layer.

Passivation scheme for solar cells

A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.

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Shanghai, China

Jing Ji