Taiwan Semiconductor Manufacturing Comp. Ltd.

Jing-Hwang Yang

Felix Ying-Kit Tsui

Hsin-Li Cheng

Jyun-Ying Lin

Chien-Li Kuo

Jui-Cheng Huang

Yi-Shao Liu

Tung-Tsun Chen

Chien-Kuo Yang

Ta-Chuan Liao

Chan-Ching Lin

Chih-Tsung Shih

Feng Yuan

Hau-Yan Lu

Alex Kalnitsky

YingKit Felix Tsui

Sui-Ying Hsu

Wei-Kang Liu

Ting-Chen Hsu

Chun-Heng Liao

Liang-Kai Han

Yen-Wen Chen

A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ2, λ is a wavelength of light.

Semiconductor structure with multi-layers film

A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Biological device and biosensing method thereof

A capacitor structure and method of forming the capacitor structure is provided, including a providing a doped region of a substrate having a two-dimensional trench array with a plurality of segments defined therein. Each of the plurality of segments has an array of a plurality of recesses extending along the substrate, where the plurality of segments are rotationally symmetric about a center of the two-dimensional trench array. A first conducting layer is presented over the surface and a bottom and sidewalls of the recesses and is insulated from the substrate by a first dielectric layer. A second conducting layer is presented over the first conducting layer and is insulated by a second dielectric layer. First and second contacts respectively connect to an exposed top surface of the first conducting layer and second conducting layer. A third contact connects to the substrate within a local region to the capacitor structure.

Low warpage high density trench capacitor

The present disclosure provides a semiconductor device package. The semiconductor device package includes a semiconductor substrate having a first surface and a first optical coupler disposed on the first surface of the semiconductor substrate. The first optical coupler includes a first surface facing away from the first surface of the semiconductor substrate and a first lateral surface connected to the first surface of the first optical coupler. The first surface of the first optical coupler and the first lateral surface of the optical coupler define an angle greater than 90 degrees. A method of manufacturing a semiconductor device package is also disclosed.

Semiconductor device package and method of manufacturing the same

Various embodiments of the present application are directed towards a trench capacitor with a high capacitance density. In some embodiments, the trench capacitor overlies the substrate and fills a trench defined by the substrate. The trench capacitor comprises a lower capacitor electrode, a capacitor dielectric layer, and an upper capacitor electrode. The capacitor dielectric layer overlies the lower capacitor electrode and lines the trench. The upper capacitor electrode overlies the capacitor dielectric layer and lines the trench over the capacitor dielectric layer. The capacitor dielectric layer comprises a high &#x3ba; dielectric material. By using a high &#x3ba; material for the dielectric layer, the trench capacitor may have a high capacitance density suitable for use with high performance mobile devices.

Film scheme for a high density trench capacitor

The present disclosure involves a method. The method includes providing a substrate including a top surface. The method also includes forming a gate over the top surface of the substrate. The formed gate has a first height measured from the top surface of the substrate. The method also includes etching the gate to reduce the gate to a second height. This second height is substantially less than the first height. The present disclosure also involves a semiconductor device. The semiconductor device includes a substrate. The substrate includes a top surface. The semiconductor device also includes a first gate formed over the top surface of the substrate. The first gate has a first height. The semiconductor device also includes a second gate formed over the top surface of the substrate. The second gate has a second height. The first height is substantially less than the second height.

Low TCR high resistance resistor

Some embodiments relate to high density capacitor structures. Some embodiments include a semiconductor substrate having an conductive region with a plurality of trenches formed therein. A first dielectric layer is formed over respective bottom portions and respective sidewall portions of the respective trenches. A first conductive layer is formed in the trench and over the first dielectric layer, wherein the first dielectric layer acts as a first capacitor dielectric between the conductive region and the first conductive layer. A second dielectric layer is formed in the trench and over the first conductive layer. A second conductive layer is formed in the trench and over the second dielectric layer, wherein the second dielectric layer acts as a second capacitor dielectric between the first conductive layer and the second conductive layer. Other embodiments are also disclosed.

Deep trench structure for high density capacitor

Growing community of inventors

Zhubei, Taiwan

Jing-Hwang Yang