Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

Jing-Hung Chiou

Kai-Hsiang Yen

Po-Hao Tsai

Yuh-Wen Lee

Chao-Chiun Liang

Chin-Horng Wang

Nai-Hao Kuo

Ran-Jin Lin

Kaihsiang Yen

Stella Y H Chen

Yi-Shiau Chen

Jih-Wen Wang

Wen-Jiun Liu

Su-I Cheng

Kun-Ho Chou

Jia-Hroung Wu

The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.

Structure for measuring the etching speed

A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.

Fabrication method for microstructures with high aspect ratios

Method for measuring the etching speed

Test structure and method of step coverage for optical waveguide production are disclosed. It combines the steps of producing the optical waveguide and the testing structure by forming the optical waveguide components on the chip and the test structure in the surrounding areas, so the optical waveguide and the test structure have the same upper covering layer. Etching solution is used for the etch testing of the test structure, and the step coverage of the upper covering layer for the optical waveguide is extrapolated by the etching result.

Test structure and method of step coverage for optical waveguide production

A method for fabricating a 3-dimensional solenoid utilizing a CMOS fabrication technology and a back end process without using photomasking is described. In the method, two suspended arms each formed of a bi-layered metal structure from metals that have different residual stress or coefficients of thermal expansion are utilized for connecting to an inductor coil formed of AlCu in-between the two arms. When the insulating layer of silicon dioxide is removed from the suspended arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure.

Method for fabricating 3-dimensional solenoid and device fabricated

A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.

Method for fabricating a tunable, 3-dimensional solenoid and device fabricated

A microelectronic tunable capacitor and a method for fabricating the capacitor are described. The capacitor is formed by a micro-actuator, a first fixed capacitor plate and a second swayable capacitor plate suspended over the first plate. The micro-actuator is formed by a pair of fixed electrodes positioned spaced-apart from each other sandwiching without contact a suspended arm electrode swayable between the pair of fixed eletrodes. The second swayable capacitor plate is mounted to the suspended arm and sways by an electrostatic force between the pair of fixed electrodes to suitably adjust a desirable capacitance for the tunable capacitor.

Microelectronic tunable capacitor and method for fabrication

Growing community of inventors

Hsinchu, Taiwan

Jing-Hung Chiou