Shenzhen China Star Optoelectronics Technology Co., Ltd.

Jing-feng Xue

Xiaohui Yao

Jehao Hsu

Chengcai Dong

A patterned vertical alignment (PVA) pixel electrode is disclosed. The PVA pixel electrode includes a first electrode and a second electrode. The first and second electrodes form a pre-tilt angle with respect to a periphery of the pixel. By disposing unequal lengths of indium-tin oxide (ITO) gaps at a periphery of the first and second electrodes, a distance between the first and second electrodes gradually becomes shortened from the center of the pixel outwards. The ITO gaps which are disposed at the periphery of a thin film transistor (TFT)-array substrate and/or a color filter (CF) are adjusted for eliminating a fringe field effect in the present invention, which a transmittance on the pixel regions is improved and an effect of image display quality is enhanced.

Patterned vertical alignment pixel electrode

The present invention provides methods for manufacturing a thin film transistor (TFT) array substrate and a display panel. The method for manufacturing the TFT array substrate comprises the following steps: forming a plurality of gate electrodes, a gate insulating layer, a semiconductor layer, an ohmic contact layer, an electrode layer and a first photo-resist layer on a transparent substrate in sequence; patterning the first photo-resist layer; etching the ohmic contact layer and the electrode layer; coating a second photo-resist layer on the patterned first photo-resist layer and in the channels; removing the second photo-resist layer on the patterned first photo-resist layer and to allow the second photo-resist layer in the channels to remain therein; etching the semiconductor layer; removing the patterned first photo-resist layer and the second photo-resist layer; forming a passivation layer on the channels, the source electrodes and the drain electrodes; and forming a pixel electrode layer on the passivation layer. The present invention can reduce an amount of the required masks in the fabrication process, and only one wet etching is required to etch the metal material on the TFT array substrate.

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Shenzhen, China

Jing-feng Xue