Samsung Electronics Co., Ltd.

Jing Cui

Duck Hwan Kim

In Sang Song

Moon Chul Lee

Sang Uk Son

Jea Shik Shin

Ho Soo Park

Chul Soo Kim

Chul Kyu Kim

Jae Chun Lee

Jie Ai Yu

A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.

Thin film bulk acoustic resonator and method for manufacturing same

A filter using bulk acoustic wave resonators (BAWRs) is provided including BAWRs connected in series or in parallel to each other. A BAWR set is configured by connecting an inductance and capacitance (L/C) element to each BAWR in series or in parallel.

Filter using BAWRs and L/C elements connected to the BAWRs

Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a first electrode, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer. In various aspects, at least one of the first electrode, the piezoelectric layer, and the second electrode are formed of a carbon-based material.

Bulk acoustic wave resonator and manufacturing method thereof, and radio frequency device using bulk acoustic wave resonator

A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.

Nano resonator and manufacturing method thereof

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Yongin-si, South Korea

Jing Cui