Ili Technology Corporation

Jing-Chi Yu

Wen-Chi Wu

Chi-Mo Huang

Yu-Lun Lu

Yao-Ching Wang

Hsiu-Ping Lin

A semiconductor device of the present invention comprises: a P type semiconductor substrate, an N-well, a first P+ diffusion region, a second P+ diffusion region, a Schottky diode, a first N+ diffusion region, a second N+ diffusion region, a third P+ diffusion region, a fourth P+ diffusion region, a first insulation layer, a second insulation layer, a first parasitic bipolar junction transistor (BJT), and a second parasitic BJT. The Schottky diode is coupled to an input signal. The first N+ diffusion region and the second N+ diffusion region are coupled to a voltage source, respectively. When a voltage level of the input signal is higher than a voltage level of the voltage source, the Schottky diode conducts charges to make the first parasitic BJT and the second parasitic BJT not conducted.

Semiconductor device

An amplifying circuit includes an operational amplifier, a pull-up circuit and a pull-down circuit. The operational amplifier generates a first pull-up signal, a first pull-down signal and an output signal, wherein the phases of the first pull-up signal and the first pull-down signal are out of phase with the output signal. The pull-up circuit includes a first controlling module for outputting a second pull-up signal according to the first pull-up signal, and a first adjusting module for adjusting the output signal according to the second pull-up signal. The pull-down circuit includes a second controlling module for outputting a second pull-down signal according to the first pull-down signal, and a second adjusting module for adjusting the output signal according to the second pull-down signal.

Growing community of inventors

Hsinchu, Taiwan

Jing-Chi Yu