Wuhan China Star Optoelectronics Technology Co., Ltd.

Jinfang Wu

Yafeng Li

The invention provides a GOA circuit. The first node control module of the GOA circuit provided by the invention comprises a tenth TFT, an eleventh TFT and a twelfth TFT of N-type TFTs, when the voltage of the first node is high, the gate-to-source voltage difference of the twelfth TFT is the threshold voltage thereof, so that the drain-source voltage difference of the eleventh TFT is also the threshold voltage of the twelfth TFT, thereby making the resistance between the drain of the tenth TFT and the first node is extremely large, which can avoid the impact of leakage current generated by the tenth TFT on the voltage of the first node when the noise and coupling in the second node occurs, and to ensure the normal output of the scan signal.

GOA circuit

The present disclosure provides a display panel including a display area and a non-display area, a base substrate, a plurality of thin film transistors, a plurality of touch signal lines, a first test signal line area, an array substrate row driving circuit, a second test signal line area, a ground line area and an insulating layer. The thin film transistor includes a gate, a gate insulating layer, a source and a drain. The non-display area includes a first side and a second side; the array substrate row driving circuit respectively forms a first gap and a second gap with the first test signal line area and the second test signal line area, an orthographic projection of the ground line area on the base substrate is in the projection of the second test signal line area in the base substrate. The present disclosure also provides a display device.

Display panel and display device

The present invention provides a method for manufacturing a display device includes providing an array substrate with a plurality of pixel unit areas formed on a surface thereof; defining a dividing line; dividing the pixel unit areas to a pixel calculating area, a predetermined displaying area, and a predetermined shielding area, and dividing the pixel calculating area to a first part and a second part by the dividing line; calculating areas of sub pixels according to light extraction efficiencies and effective light extraction areas of the sub pixels; forming a shielding layer according to the areas of the sub pixels.

Method for manufacturing display device

The present invention provides a GOA circuit based on LTPS semiconductor thin film transistor to control the voltage levels of the first node (Q(n)) and the second node (P(n)) with the forward scan direct current control signal (UD) and the backward scan direct current control signal (DU). The clock signal (CK(M)) is merely in charge of the output of the GOA unit of corresponding stage, which can effectively reduce the loading of the clock signal. It ensures that the entire loading of the clock signal after the GOA units of multiple stages are coupled to promote the output stability of the GOA circuit, and to realize the forward-backward scan of the GOA circuit. Moreover, the GOA unit of each stage comprises only ten thin film transistors, which is beneficial to reduce the layout space of the GOA circuit and to achieve the narrow frame design of the display device.

GOA circuit based on LTPS semiconductor thin film transistor

The invention provides a GOA circuit for LTPS-TFT, by adding the twelfth and thirteenth TFTs (T, T) controlled by output ends (G(n&#x2212;1), G(n+1)) of (n&#x2212;1)-th and (n+1)-th GOA units, the drain of twelfth TFT Tconnected through the fourth node (W()) to source of first TFT (T), the drain of first TFT (T) connected to output end of (n&#x2212;1)-th GOA unit, the drain of thirteenth TFT (T) connected through the fifth node W() to source of third TFT (T), the drain of third TFT (T) connected to output end of (n+1)-th GOA unit; the first and third TFTs (T, T) controlled respectively by the forward and backward scan DC control signals (UD, DU) to reduce leakage of twelfth TFT (T) in forward scanning and leakage of thirteenth TFT (T) in backward scanning. As such, the leakage in key TFTs is reduced and GOA circuit stability is improved.

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Wuhan, China

Jinfang Wu