Taiwan Semiconductor Manufacturing Comp. Ltd.

Jinesh B P Kochupurackal

Robertus A M Wolters

Michael A A Zandt

A phase change memory cell, e.g. a line-cell (), and fabrication thereof, the cell comprising: two electrodes (); phase change memory material () and a dielectric barrier (). The dielectric barrier () is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phase change memory material (). A contact () made of phase change memory material may also be provided. The dielectric barrier () is substantially uniform e.g. of substantially uniform thickness, e.g. &#x2267;5 nm.

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Singapore, Singapore

Jinesh B P Kochupurackal