Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Beijing Boe Optoelectronics Technology Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Jinchao Bai

Yao Liu

Xiangqian Ding

Liangliang Li

Huibin Guo

Zongjie Guo

Liang Sun

Xiaowei Liu

Xi Chen

Zhaohui Hao

Jing Wang

Xiaolong Li

Xiao Han

Bo Liu

Zheng Liu

Lianjie Qu

Yongzhi Song

Hui Guo

Yue Liu

Xiaoxiang Zhang

Tsungchieh Kuo

Mingxuan Liu

Zhichao Zhang

Yihe Jia

Zumou Wu

Xun Wang

Tianyu Zuo

Yanxin Ji

Young Tae Hong

An array substrate includes a base substrate, a driving circuit layer with a first pillow body on a peripheral region of the array substrate, an organic thin film layer and a conductive layer sequentially stacked; the first pillow body includes a first pillow metal block located on at least one of a source drain metal layer and a gate layer and a first pillow insulating layer covering the first pillow metal block; the organic thin film layer is defined with a barrier groove on the peripheral region, the first pillow body is provided with a part covered by the organic thin film layer and the other part exposed by the barrier groove; the conductive layer is provided with a signal wire passing across an edge of the barrier groove, and an edge of the signal wire at least partially overlaps with the first pillow body.

Display panel, array substrate and method for preparing same

The present disclosure relates to a flexible temperature sensor, a method for preparing the same, and a flexible device. The flexible temperature sensor includes: a flexible substrate; an electrode arranged on the flexible substrate; a mixed fluid arranged on the flexible substrate and in contact with the electrode, in which the mixed fluid includes an ionic liquid and porous conductive particles; and a protective plate arranged on a surface of the flexible substrate having the mixed fluid to protect the mixed fluid.

Flexible temperature sensor, method for preparing the same and flexible device

Embodiments of the present disclosure disclose a thin film transistor, a method for manufacturing a thin film transistor, an array substrate, and a display device. The thin film transistor includes a source electrode and a drain electrode, each of the source electrode and the drain electrode including a metal substrate and a conductive layer covering the metal substrate. An adhesion between the conductive layer and a photoresist material is larger than an adhesion between the metal substrate and the photoresist material. The metal substrate and the conductive layer are both formed on a base substrate, an orthographic projection of the conductive layer on the base substrate covers an orthographic projection of the metal substrate on the base substrate, and. an area of the orthographic projection of the conductive layer on the base substrate is larger than an area of the orthographic projection of the metal substrate on the base substrate.

Thin film transistor and method for manufacturing the same, array substrate, and display device

A dual-gate thin film transistor, a manufacturing method thereof, an array substrate and a display device are provided. The dual-gate thin film transistor includes: a base substrate and a first gate, a first gate insulating layer, an active layer, a second gate insulating layer, a first electrode, a second electrode, a second gate and a connection electrode, formed on the base substrate. The second gate, the first electrode and the second electrode are formed on the same level. The first gate insulating layer includes a first via hole exposing a portion of the first gate, and the connection electrode is electrically connected with the second gate and is electrically connected with the first gate through the first via hole.

Dual-gate thin film transistor, manufacturing method thereof, array substrate and display device

This disclosure provides an array substrate, a method for fabricating the same, a display panel, and a display device, where a first photo-resist layer is stripped in a changed order in that the first photo-resist layer on a source-drain is stripped through wet etching before a ohm contact layer film and an active layer film are etched in an electrically-conductive channel area (i.e., an electrically-conductive channel of a TFT is etched) to form an ohm contact layer and an active layer.

Method for preparing array substrate by stripping first photo-resist layer through wet etching before forming ohm contact layer and active layer

An array substrate motherboard, a manufacturing method thereof and a display device are provided. The manufacturing method includes forming a film layer pattern for a first display product at a first region of a base substrate and forming a film layer pattern for a second display product at a second region of the base substrate. The first display product has deep holes at a density larger than the second display product, and each deep hole is a via-hole penetrating through at least two insulation layers. Specifically, the manufacturing method include: prior to forming a second conductive pattern on an insulation layer, reducing a thickness of the insulation layer at the first region; and forming the second conductive pattern on the insulation layer, and enabling the second conductive pattern to be connected to a first conductive pattern under the insulation layer through a via-hole structure penetrating through the insulation layer.

Method for manufacturing an array substrate motherboard

An array substrate, a testing method and a manufacturing method of the array substrate are disclosed. The array substrate comprises a first test line (), a second test line (), and first data lines () and second data lines () that are disposed alternately. The first data lines () are directly connected to the first test line (), and the second data lines () are connected to the second test line () through switch elements (); or, the second data lines () are directly connected to the second test line (), and the first data lines () are connected to the first test line () through switch elements (). With the array substrate, charges in the display region can be avoided from being transferred to a test line, thereby decreasing the accumulation of static electricity, and enhancing reliability of the short bar region.

Array substrate and testing method and manufacturing method thereof

Embodiments of the present invention relate to a thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The TFT includes an active layer, an amorphous silicon (a-Si) connecting layer and a source-drain electrode layer. The active layer includes a channel region, a source region and a drain region; forming materials of the channel region include polycrystalline silicon (poly-Si); the a-Si connecting layer is disposed on a side of the active layer and includes a first connecting part and a second connecting part which are spaced from each other; the source-drain electrode layer includes a source electrode and a drain electrode which are spaced to each other; the source electrode is electrically connected with the source region through the first connecting part; and the drain electrode is electrically connected with the drain electrode through the second connecting part.

Thin-film transistor (TFT) and manufacturing method thereof, array substrate and manufacturing method thereof, and display device

Disclosed is an array substrate including a base substrate and a gate metal layer, a semiconductor layer, a source-drain metal layer, and a pixel electrode layer that are formed on the base substrate. The gate metal layer includes gate lines, gate electrodes of thin film transistors, and a plurality of first sensing lines extending along a row direction. The semiconductor layer includes an active layer of the thin film transistors, and a plurality of first photosensitive elements and a plurality of second photosensitive elements that are insulated from each other. The source-drain metal layer includes data lines, source electrodes and drain electrodes of the thin film transistors, and a plurality of second sensing lines extending along a column direction. Also disclosed are a method of fabricating the array substrate, an optical touch screen and a display device.

Array substrate and fabrication method thereof, optical touch screen, and display device

The present application discloses A thin film transistor (TFT), including: a substrate; a source-drain layer comprising a source electrode and a drain electrode over the substrate; and an active layer comprising a poly-Si pattern and an amorphous-Si pattern having contact with the poly-Si pattern over the substrate. The amorphous-Si pattern is between the poly-Si pattern and the source-drain layer; the source electrode overlaps with the poly-Si pattern and the amorphous-Si pattern respectively in a direction substantially perpendicular to a surface of the substrate; and the drain electrode overlaps with the poly-Si pattern and the amorphous-Si pattern respectively in the direction substantially perpendicular to the surface of the substrate.

Thin film transistor, array substrate, and display apparatus, and fabrication methods thereof

A substrate and a manufacturing method thereof, and a display device are provided. The substrate comprises a base substrate (), a metal black matrix () and an anti-reflection pattern (A,B) for reducing optical reflectivity of the metal black matrix (), which are arranged on the base substrate (), and the anti-reflection pattern (A,B) is arranged on a side of the metal black matrix () close to a light emission side of the substrate. The anti-reflection pattern (A,B) reduces reflectivity of the metal black matrix () on outside ambient light, increases a display contrast of a display device that includes the substrate, and thus improves display quality of the pictures.

Substrate and manufacturing method thereof, and display device

An array substrate and manufacturing method thereof and display device are provided. The method of manufacturing the array substrate includes forming a pattern including a gate electrode, a gate line, a common electrode line and a gate insulating layer on a substrate; forming a pattern including a data line, a source electrode, a drain electrode and an active layer; forming a pattern including an insulating interlayer over the pattern of the source electrode, the drain electrode and the active layer; forming a pattern including a first transparent electrode over the insulating interlayer; forming a pattern including a passivation layer over the first transparent electrode; and forming a pattern including a second transparent electrode over the passivation layer. The method can efficiently prevent the ITO process polluting the TFT channel.

Array substrate with thin film transistor and method of manufacturing the same

An array substrate and a manufacturing method thereof, a display panel and a display device are disclosed. The method for manufacturing an array substrate includes: forming a first via hole for connecting a second transparent electrically conductive layer and a gate line layer, a second via hole for connecting a first transparent electrically conductive layer and the second transparent electrically conductive layer, and a third via hole for connecting the second transparent electrically conductive layer and a source/drain electrode layer on a base substrate through patterning process; performing a filling process on the first via hole, the second via hole and the third via hole during a pattern of second transparent electrically conductive layer is being formed, such that each of the three via holes has a top surface which is flush with the second transparent electrically conductive layer surrounding the respective via holes.

Array substrate and manufacturing method thereof, display panel and display device

A detection device includes a chamber for vacuum coating, a capacitance measurement device and a baffle mechanism located in the chamber. The baffle mechanism is a closed structure encompassed by a number of baffle walls, wherein at least one baffle wall includes a fixed baffle plate and a moveable baffle plate. The moveable baffle plate is pivotable about the fixed baffle plate. The moveable baffle plate, after pivoting, may get parallel with an adjacent baffle wall. The adjacent baffle wall and the moveable baffle plate are respectively connected to the capacitance measurement device, and the capacitance measurement device is used to measure the capacitance between the adjacent baffle wall and the moveable baffle plate. The detection device may accurately detect the service life of the baffle mechanism and achieve precise management of the apparatus.

Detection system for detecting service life of baffle mechanism in a chamber for vacuum coating

A touch display panel, a manufacturing method thereof, a driving method and a touch display device are disclosed. The touch display panel comprises an array substrate and a color film substrate, wherein the array substrate comprises a first thin film transistor and a first detection line formed on a first substrate, and the color film substrate comprises a main spacer, an auxiliary spacer, a reference signal line and a second detection line formed on a second substrate. The bottom of the main spacer is connected to the reference signal line, the top of the main spacer is connected to a first source, the bottom of the auxiliary spacer is connected to the second detection line, and a projection of the top of the auxiliary spacer on the array substrate connects a first drain with the first detection line.

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Beijing, China

Jinchao Bai