Lg Display Co., Ltd.

Jinchae Jeon

KiSul Cho

Kisul Cho

A thin film transistor array substrate and a method for manufacturing the same are disclosed. The thin film transistor array substrate includes a plurality of pixel units defined by a cross structure of gate lines with data lines and power lines on a substrate. Each of the pixel units includes a driving unit, which includes a switching thin film transistor and a driving thin film transistor receiving a signal from the gate line, the data line, and the power line, and a capacitor storing a signal; and a light emitting unit emitting light on a pixel electrode receiving a driving current from the driving thin film transistor. Each of a plurality of shielding patterns is positioned under the switching thin film transistor and the driving thin film transistor of the pixel unit.

Thin film transistor array substrate and method for manufacturing the same

An organic light emitting diode (OLED) display device can include a gate line including a gate electrode; an active layer over the gate line with a gate insulating layer interposed therebetween and including an amorphous zinc oxide semiconductor; a first protective layer over color filters on an insulating layer over first source and drain electrodes; second source and drain electrodes on the first protective layer and connected to the first source and drain electrodes; a second protective layer having a third contact hole; a pixel electrode on the second protective layer and connected to the second drain electrode through the third contact hole; a partition partitioning the pixel region; and an organic light emitting layer over the partition. Also, the gate electrode is located to cover a lower portion of the active layer and the second source electrode is extended to cover the channel region of the active layer.

Organic light emitting diode display device and method of fabricating the same

An organic light emitting diode (OLED) display device in which an oxide-based semiconductor is used as an active layer of a TFT and the fabrication method thereof are provided. In the OLED display device, the active layer is formed at an upper portion of the gate electrode and a source electrode is patterned to completely cover the channel region of the active layer, to block light introduced from upper and lower portions of the active layer, thereby improving reliability of the oxide TFT.

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Daegu, South Korea

Jinchae Jeon