Shenzhen New Degree Technology Co., Ltd.

Sun Yat-Senuniversity

Jinbo Yu

Jing Wang

Shuaichen Si

Tuoxia Huang

Yu Wei Chen

Hao Li

Zhiyun Chen

Xuejie Zhang

Luyu Cao

Changfeng Zhu

Qiongyun Liang

The present application discloses a strain sensing film, a pressure sensor, and a strain sensing system; the strain sensing film includes a semiconductor film, and by arranging a temperature sensor in the semiconductor film, the sensitivity of the strain sensing film is adjusted according to an effective gauge factor obtained from a calibration test and a correlation table reflecting a correlation between an effective gauge factor and a temperature, a better effective gauge factor compensation is achieved, a high sensitivity of the strain gauge of the semiconductor film can be fully utilized. The strain sensing film can be widely used in application scenarios that need to measure local strain or strain variation, force or force variation, pressure or pressure change, displacement, deformation, bending, or bending deformation.

Multi-parameter sensing system

A pressure-sensitive structure and an electronic device are provided in the present application, in the structure of the pressure-sensitive structure, a first elastic carrier is arranged on a first mounting surface of the substrate, a semiconductor film is arranged on the first elastic carrier. When the substrate is deformed, the first elastic carrier is bent and deformed with a deformation of the substrate, a strain signal is amplified by the substrate, so that the semiconductor film can detect an amount of bending deformation of the substrate, and a signal measurement circuit of the semiconductor film is configured to output a recognizable electric signal. The pressure-sensitive structure is a sensor structure being small in size, being high in precision, and being high in reliability and sensitivity. The pressure-sensitive structure is attached to a panel or a side frame of the electronic device.

Pressure-sensitive structure and electronic device

The present application relates to a pressure sensing device and a pressure sensing apparatus. The pressure sensing device () includes: one or more pressure sensing sheet (), and a first substrate () configured for carrying the pressure sensing sheet (); the pressure sensing sheet () is connected with the first substrate () by welding, and welding points are configured for transmitting a deformation and transmitting an electrical signal, and the pressure sensing sheet includes at least one semiconductor film (), and a signal measurement circuit is integrated in the at least one semiconductor film (), and the signal measurement circuit is configured for detecting an amount of the deformation and outputting the electrical signal that is able to be identified. Integrating the signal detection circuit in the semiconductor film () is greatly reduce the volume of the structure, which is beneficial to improve the integration degree of the product, and is beneficial to the miniaturization of the product.

Pressure sensing device and pressure sensing apparatus

The present invention relates to a divalent manganese-doped all-inorganic perovskite quantum dot glass, and constituents of the divalent manganese-doped all-inorganic perovskite quantum dot glass are as follows: BO: 25%-45%, SiO: 25%-45%, MCO: 1%-10%, AlO: 1%-10%, ZnO: 1%-5%, CsCO: 1%-10%, PbCl: 1%-10%, NaCl: 1%-10%, MnCl: 1%-10%, wherein M is Ca, Sr or Ba. Preparation of the quantum dot glass is as follows: grinding each raw constituent materials and mixing well to form a mixture, melting the mixture, followed by molding, annealing and performing thermal treatment. By the thermal treatment at different temperatures, a divalent manganese-doped quantum dot glass can be obtained. The divalent manganese ions doped perovskite quantum dot glass is a kind of light-emitting material with great application prospect, for possessing good stability and rather high fluorescence quantum yield.

Divalent manganese-doped all-inorganic perovskite quantum dot glass and preparation method thereof

The present invention discloses a glass ceramic for excitation of high-power semiconductor light source. An expression of constitution of the glass ceramic is (1&#x2212;x)A: xB, wherein x as a weight percentage of B, is ranging from 1% to 30%; A as a precursor glass, has a composition of aSbO-bBO-cZnO-dMO, a, b, c, d being molar percentages, a+b+c+d=100%, M among MO represents an alkali metal, and MO is an alkali metallic oxide or an alkali metallic carbonate; and B is a YAG:Cefluorescent powder. The precursor glass provided by the present invention has a relatively low remelting temperature, without devitrification during the process of preparing the final products or absorption of blue light. The product glass ceramic has a luminous efficiency of 300 lm/W to 400 lm/W. A white light semiconductor light source is prepared by the product glass ceramic in combination with the high-power blue light semiconductor light source. A preparation method provided by the present invention has advantages such as low cost, excellent performances, and being green, pollution-free and suitable for the large-scale industrial production. The present invention can be applied in the field of illumination light source and display light source, such as head-lights of vehicles, searchlights, projectors and laser cinemas.

Growing community of inventors

Guangdong, China

Jinbo Yu