Applied Materials, Inc.

Jin-Yuan Chen

Arthur H Sato

John Patrick Holland

Valentin Nikolov Todorow

Valentin N Todorov

Xueyu Qian

Robert E Ryan

Zhiwen Sun

A system and method for overcoming the above-described problems relating to the delivery of pulsed RF power to a plasma processing chamber. The power reflected from the chamber is reduced using one or more of the following techniques: (1) varying the RF frequency within a pulse period; (2) ramping up the pulse heights at the leading edge of the pulse train; (3) simultaneously transmitting a relatively low CW signal along with the pulsed signal; and (4) rapidly switching the shunt capacitance within a local matching network within a pulse period. The amount of power delivered to the plasma by the pulses is measured by way of a time-averaging mechanism coupled to a directional coupler connected to the transmission line. The time-averaging mechanism may comprise circuitry to measure temperatures of loads attached to the directional coupler, or analog integrating circuitry attached to the directional coupler, or digital integrating circuitry attached to the directional coupler.

Pulsed RF power delivery for plasma processing

The present invention provides a process chamber and voltage distributive electrode (VDE) which distributes capacitive coupling between an inductive source and a plasma in a process chamber. The VDE is preferably slotted defining energy opaque and energy transparent portions which enable inductive coupling into the chamber while distributing capacitive coupling uniformly over the dielectric window.

Process chamber having a voltage distribution electrode

Growing community of inventors

Bountiful, UT, United States of America

Jin-Yuan Chen