Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Yonsei University

Jin-Young Chun

Bin-Chul Ihm

Yong-Suk Jin

Jae-Yong Jeong

Jae-Won Chang

Seung Hee Han

Hyunsoo Ko

Moon-Il Lee

Jin-Hyuk Jung

Bin Chul Ihm

Wook Bong Lee

Jin Sam Kwak

Yong Ho Kim

Young Soo Yuk

Seong-Ook Jung

Yo-Han Lee

Chi-Weon Yoon

Jun-Young Ko

Moon Il Lee

Hyun Soo Ko

Ki Seon Ryu

Sung Ho Park

Sunam Kim

Chaehoon Kim

Chang-Yeon Yu

Ji-Suk Kim

Se-heon Baek

Ji-su Kim

Jin Hyuk Jung

Kyung-Ryun Kim

Sang-Yong Yoon

Taeyun Lee

Kyoman Kang

Tae-hong Kwon

Jae-Hoon Chung

Wook-Bong Lee

Hyun-Soo Ko

Jae-Yong Jeon

Ki Sun Ryu

Yunyeong Jeon

Seung Hee Lg R&D Complex Han

Yong-Suk Chowonmaeul Booyoung Apt 701-307 Jin

Bin-Chul Keumho Apt 101-1005 282-31 Ihm

A page buffer includes a pre-charge unit for pre-charging a bit line of a selected memory cell of a memory cell array via a first pre-charge line and pre-charging a sensing node via a second pre-charge line, during a pre-charge time, a bit line connection unit connected between the bit line and the sensing node and including a connecting node connected to the first pre-charge line, the bit line connection unit controlling a voltage of the sensing node, during a develop time, based on a bit line connection control signal and a sensing node voltage control signal, and a data input and output unit for generating sensing data by sensing a level of the voltage of the sensing node, during a sensing time.

Page buffer, a memory device including the same and a read operation method thereof

Methods of operating a memory device include at least partially charging a sensing node within a page buffer of the memory device to a first precharge voltage, by sampling a trip voltage of a sensing latch within the page buffer. Thereafter, a voltage of the sensing node is boosted from the first precharge voltage to a higher second precharge voltage. Then, a voltage of the sensing node that reflects a value of data stored in a memory cell of the memory device is developed at the sensing node. The developed voltage is then transferred to the sensing latch so that data stored by the sensing latch reflects the value of data stored in the memory cell.

Memory devices that sample latch trip voltages prior to reading data into latches and methods of operating same

A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.

Non-volatile memory device and programming method thereof

A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.

Memory device, memory system, and read/verify operation method of the memory device

A method of transmitting and receiving data using a superframe structure is disclosed. A method for transmitting data through a superframe including a superframe header, includes generating the superframe which includes a data region including user data and includes a dedicated control region including data region allocation information indicating resource allocation for the data region, and transmitting the superframe. The dedicated control region is arranged at at least one of locations except for a subframe of the superframe header. A user equipment which does not have to transmit and receive data decodes only data region allocation information using information of the data region indicated by a dedicated control region, thereby minimizing power loss, reducing a feedback delay, and reducing system overhead using a superframe structure.

Method for transmitting and receiving data with superframe structure

In a method of optimizing a log likelihood ratio (LLR) used to correct errors related to data stored in a nonvolatile memory device, variation of threshold voltage distribution for a plurality of memory cells included in the nonvolatile memory device is monitored, and the LLR for the memory cells is updated based on a monitoring result. Although the characteristics of the memory cells are deteriorated, the LLR is continuously maintained to the optimal value.

Method and device for optimizing log likelihood ratio (LLR) used for nonvolatile memory device and for correcting errors in nonvolatile memory device

A method of communicating feedback information between a mobile station and a base station comprises determining a need to request bandwidth allocation; providing information to a base station according to the determining, wherein the information indicates bandwidth allocation for a fast feedback channel; and performing communication with the base station upon bandwidth allocation according to the provided information.

CQICH allocation request header for communicating feedback information

According to one embodiment, a method for repetitive transmission using a plurality of sub-carriers includes: preparing a symbol to be transmitted using the plurality of sub-carriers within a single time domain unit; repeating the symbol a predetermined number (N) of times; applying a corresponding one of N different cyclic shift values to each of the N repeated symbols to be transmitted using the plurality of sub-carriers within the single time domain unit; performing an IFFT (Inverse Fast Fourier Transform) on each of the N repeated symbols to which the corresponding one of the N different cyclic shift values is applied; and transmitting the N repeated symbols on which the IFFT is performed using the plurality of sub-carriers.

Repetitive transmissions in multi-carrier based wireless access techniques

Repetitive transmissions in multi-carrier based wireless access techniques may be achieved by providing multiple cyclic delay values for a plurality of carriers, performing a cyclic delay procedure using the multiple cyclic delay values according to the number of repetitive transmission of data symbols to be transmitted to a receiver, and transmitting the cyclic delayed data symbols to the receiver using the plurality of carriers.

A phase-shift based pre-coding scheme used in a transmitting side and a receiving side that has less complexity than those of a space-time coding scheme, that can support various spatial multiplexing rates while maintaining the advantages of the phase-shift diversity scheme, that has less channel sensitivity than that of the pre-coding scheme, and that only requires a low capacity codebook is provided.

Signal generation using phase-shift based pre-coding

A method of erasing data in a flash memory device, including erasing data in at least one flash memory cell using a first erase voltage; detecting whether the at least one flash memory cell has a threshold voltage less than a first voltage; programming the at least one flash memory cell by varying the threshold voltage of the at least one flash memory cell using a second voltage that is greater than the first voltage if the detecting step detects the threshold voltage is less than the first voltage; maintaining the threshold voltage of the at least one flash memory cell if the detecting step detects the threshold voltage is greater than the first voltage; and verifying the at least one flash memory cell using a first verification voltage.

Method of erasing data in flash memory device

A method of retransmitting packet data in a wireless communication system comprises receiving a link map information element from a transmitting station having three antennas to achieve space time transmit diversity, wherein first, second and third packet data are transmitted from first, second and third antenna of the transmitting station, respectively. The method also comprises transmitting a non-acknowledgement signal to the transmitting station if at least one packet data from the transmitting station is not properly decoded. The method also comprises receiving the packet data from the transmitting station, wherein at least two of retransmitted packet data are transmitted from different antennas of the transmitting station, and one of retransmitted packet data is transmitted from the same antenna of the transmitting station. The retransmitted packet data are received with an information element comprising a retransmission count associated with a number of retransmission made by the transmitting station.

Packet transmission in a wireless communication system using multiple antennas

Growing community of inventors

Seoul, South Korea

Jin-Young Chun