Other

Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Adrc. Co. Kr

Hyundai Electronics Industries Co. Ltd.

Lg Philips Lcd Co., Inc.

University-industry Cooperation Group of Kyung Hee University

Orion Electric Company, Ltd.

Jin Yong Jang

Kyung-Ha Lee

Joon-Chul Goh

Jong-Hyun Choi

Jin Woo Choi

Jae-Young Oh

Soo-Young Yoon

Jun Hyuk Cheon

Suhui Lee

Jae-gak Kim

You-Chan Chung

Junyeong Kim

Jin Young Park

Min Jung Kim

Jin Kyu Choi

Eun Seok Hong

Seong-Jin Park

Ah Young Kim

Kyu Chang Park

Woo Kwang Lee

Soon Do Kim

Jae-seong Byun

Hye-Young Choi

Kyung Ho Kim

Sung-Hwan Kim

Gil Yoon Kim

Mohammad Masum Billah

Woo-Sung Shon

Soo Young Yoon

Yuanfeng Chen

Suk-jae Chung

Se-Il Cho

Seung Jin Yang

Hyun Churl Kim

Jong-Kab Park

Hong Joo Lim

Bong Yool Ryu

Keun-soo Lee

Se-Il Ok

Hong-bin Jeon

Chun Mok Chung

Md Mobaidul Islam

Ravindra Naik Bukke

A pixel circuit may include a first transistor that provides a data signal to a first node according to a scan signal, a second transistor that initializes the first node, a first capacitor that is coupled between one terminal to which a light emission signal is provided and the first node, a second capacitor that is coupled between the first node and a second node, a third transistor that includes a gate coupled to the second node and one terminal coupled to a third node, a fourth transistor that includes a gate coupled to the second node and one terminal coupled to the third node, a fifth transistor that is coupled between the second node and the third node, a drive transistor that includes a gate to which a voltage corresponding to the voltage at the third node is supplied, and a micro light emitting diode that is coupled to the drive transistor.

Pixel circuit and display including the same

Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, and an electronic device. The method of manufacturing a thin film transistor includes forming an oxide semiconductor layer, forming a gate electrode overlapped with at least a portion of the oxide semiconductor layer, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes preparing a precursor solution for an oxide semiconductor, and performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor.

Thin film transistor, method of manufacturing the same, and electronic device

The present disclosure provides a spray coater including a spray nozzle unit having at least one spray nozzle and configured to spray a coating material, a spray nozzle transfer unit configured to control a position of the spray nozzle unit by operating a transfer block, on which the spray nozzle unit is mounted, at least in a planar direction, a substrate seating unit positioned below the spray nozzle unit and configured such that a substrate, which is subjected to coating, is seated thereon, a substrate carrier configured to accommodate the substrate before the substrate is coated and accommodate the substrate after the substrate is coated, and a robot arm configured to unload the substrate from the substrate carrier and provide the substrate to the substrate seating unit before the substrate is coated or unload the substrate from the substrate seating unit and load the substrate on the substrate carrier after the substrate is coated.

Spray coater and thin-film transistor manufactured using the same

The present invention relates to a driving circuit including stages for supplying signals. The respective stages may include: a first LTPO transistor including a first transistor that is a low-temperature polycrystalline silicon thin film transistor (LTPS TFT) and a second transistor that is an oxide TFT; and a second LTPO transistor including a third transistor that is an LTPS TFT and a fourth transistor that is an oxide TFT. A first end of the first LTPO transistor may be connected to a gate of the second LTPO transistor, and voltages of signals corresponding to the respective stages from among the signals may be a voltage at a first end of the second LTPO transistor.

Driving circuit and display including the same

The present disclosure discloses an oxide semiconductor thin-film transistor and a method of fabricating the same. According to one embodiment of the present disclosure, the oxide semiconductor thin-film transistor includes a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, and source and drain electrodes. Since the gate insulating layer is formed of at least one of zirconium oxide (ZrOx) and lanthanum zirconium oxide (LaZrOx), the electrical characteristics of the oxide semiconductor thin-film transistor may be controlled by the gate insulating layer.

Oxide semiconductor thin-film transistor and method of fabricating the same

An electronic device is provided. The electronic device includes a first buffer configured to store video data and a system on chip. The system on chip may include a compression module configured to compress the video data stored in the first buffer, an encryption module configured to encrypt the compressed video data, and a universal serial bus (USB) hardware interface configured to transmit the encrypted video data. The compression module, the encryption module, and the USB hardware interface may be connected by a hardware signal line which is used to transmit video data.

Electronic device, adapter device, and video data processing method thereof

A cache and a method for performing data copying are provided. The cache includes a copy logic and be connected to a processor through a first bus and to a memory controller through a second bus, which is different from the first bus. Moreover, the copy logic may perform data copying through the second bus based on a data copy command received from the processor.

Method and apparatus for copying data using cache

The present invention relates to a method for operating a mobile communication terminal, a mobile communication system, and a method for providing contents. The mobile communication system includes a mobile communication network and a mobile communication terminal for receiving a contents service through the mobile communication network. The mobile communication system is characterized by the mobile communication terminal that downloads contents data provided from a roamed mobile communication network and performs a contents service.

Method for operating mobile communication terminal, mobile communication system, and method for providing contents thereof

A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.

Circuit and method for driving organic light emitting diode

The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer on the substrate, the organic semiconductor material is deposited on only the organic semiconductor active layer having an island shape. Therefore, it is not necessary to use a shadow mask method or a photolithography method to manufacture an active matrix array. Accordingly, the present invention has advantages in that it is possible to obtain a high resolution thin film transistor array and to prevent characteristics of the thin film transistors in the array from being deteriorated.

Fabrication method of thin-film transistor array with self-organized organic semiconductor

The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof

A method for crystallizing an amorphous film for enhancing a crystallinity and minimizing an amount of remaining metal in a polycrystalline silicon thin film, and a method for fabricating a liquid crystal display device (LCD) by using the same. The method for crystallizing an amorphous film including forming an amorphous film on a substrate; forming a thin first metal layer; forming a second metal layer on the amorphous film at predetermined parts; and heat treating the amorphous film, for crystallizing the amorphous film.

Method for crystallizing amorphous film and method for fabricating LCD by using the same

An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 10,cm,or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is used as a source gas.

Method of forming carbon nanotubes

A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.

Method of crystallizing an amorphous film

A method of fabricating a thin film transistor includes the steps of forming an active layer on an insulating substrate; forming an insulating layer and a first metal layer on the active layer; forming a photoresist pattern for forming a gate electrode on the metal layer; etching the metal layer and the insulating layer by using the photoresist pattern as a mask, and respectively forming a gate electrode and a gate insulating layer to expose a part of the active layer; forming an amorphous silicon layer on the resultant whole surface substrate; forming a second metal layer on the amorphous silicon layer; patterning the second metal layer and the amorphous silicon layer by a photolithographic process to form an offset layer and a source/drain electrode; and carrying out a lift-off process to remove the photoresist pattern, and exposing the surface on the gate electrode.

Thin film transistor and its fabrication

Growing community of inventors

Seoul, South Korea

Jin Yong Jang