Oracle International Corporation

Oracle America, Inc.

Southern Methodist University

Psiquantum Corp.

Jin Yao

Ashok V Krishnamoorthy

Xuezhe Zheng

Guoliang Li

Ying Luo

John E Cunningham

Ivan Shubin

Shiyun Lin

Gary Alan Evans

Jay Bernard Kirk

Jerome K Butler

Stevan S Djordjevic

Ruo-Hua He

Hiren D Thacker

Dawei Zheng

Tongqing Wang

Jock T Bovington

Jin-Hyoung Lee

Kannan Raj

Eric Dudley

Zhoufeng Ying

Stanley Burgos

An integrated transmitter chip having a transmitter block, the transmitter block having: a first power divider optically connected to a first input port; a second power divider optically connected to a second input port; a first plurality of optical channels optically branched from the first power divider; a second plurality of optical channels optically branched from the second power divider; a first multiplexer optically connected to a first optical channel of the first plurality of optical channels and a first optical channel of the second plurality of optical channels, and a second multiplexer optically connected to a second optical channel of the first plurality of optical channels and a second optical channel of the second plurality of optical channels. The integrated transmitter chip may be configured to utilize polarization division multiplexing or wavelength division multiplexing to combine optical signals depending on the application of the corresponding integrated transmitter chip.

Integrated multi-channel photonics transmitter chip having dual-channel multiplexers

A device includes a spot size converter on a substrate. The substrate includes an optical fiber alignment structure formed thereon. The spot size converter is aligned with the optical fiber alignment structure. The spot size converter includes an oxide layer that has a first refractive index and includes a tapered section such that a first end of the spot size converter is smaller than a second end of the spot size converter. The spot size converter also includes a waveguide core in the oxide layer. The waveguide core is tapered and is smaller at the first end than at the second end of the spot size converter. The spot size converter further includes a cladding layer surrounding the oxide layer, the cladding layer having a second refractive index lower than the first refractive index of the oxide layer.

Single photon interconnect employing low index cladding spot size converter

An integrated transmitter chip comprising: at least one input port disposed at a first end of the integrated transmitter chip; a first variable power divider optically connected to each input port of the at least one input port; a second and a third variable power dividers optically branched from each first variable power divider; a first and a second optical channel optically branched from the second variable power divider, a third and a fourth optical channel optically branched from the third variable power divider; and at least one WDM optically attached to corresponding optical channels and configured to selectively modify the polarization of and multiplex corresponding optical signals into a output optical signal, wherein a laser beam is launched into an input port, split by corresponding variable power dividers based upon each dividers corresponding splitting ratio, then multiplexed and combined into an output optical signal having dual polarization modes.

Integrated multi-channel photonics transmitter chip having variable power dividers

The present invention includes an optical waveguide with a grating and a method of making the same for increasing the effectiveness of the grating. In one example, the grating is at least partially covered by a liner layer disposed on at least a portion of a grating; and a cover layer disposed on the liner layer, wherein a first material selected for the core and ridges and a second material selected for the liner layer are selected to provide a difference in the index of refraction between the first and second material that is sufficient to provide a contrast therebetween.

Enhanced coupling strength grating having a cover layer

Method of making an enhanced coupling strength grating having a cover layer

An optical transmitter includes a reflective semiconductor optical amplifier (RSOA) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter. Moreover, a section of the first optical waveguide between the input end and the output end is optically coupled to a ring modulator that modulates an optical signal based on an electrical input signal. A passive ring filter (or a 1&#xd7;N silicon-photonic switch and a bank of band reflectors) is connected to provide a mirror that reflects light received from the second optical waveguide back toward the RSOA to form a lasing cavity. Moreover, the ring modulator and the passive ring filter have different sizes, which causes a Vernier effect that provides a large wavelength tuning range for the lasing cavity in response to tuning the ring modulator and the passive ring filter.

Wavelength-tunable III-V/Si hybrid optical transmitter

An integrated circuit that includes a wavelength-filter layer stack (which may include silicon oxynitride) and an optical substrate (such as a silicon-on-insulator platform) is described. During operation, an optical signal received from an optical fiber or an optical waveguide is wavelength filtered into a set of wavelength-filter optical waveguides by an optical multiplexer/demultiplexer (such as an Echelle grating and/or an array waveguide grating) in the wavelength-filter layer stack. Then, wavelength-filtered optical signals are optically coupled to the optical substrate, where they are received using photodetectors. Alternatively, modulators in the optical substrate modulate wavelength-filtered modulated optical signals, which are then optically coupled to the set of wavelength-filter optical waveguides in the wavelength-filter layer stack. Next, the wavelength-filtered modulated optical signals are combined using the optical multiplexer/demultiplexer, and the resulting optical signal is output to the optical fiber or the optical waveguide.

Polarization-insensitive optical transceiver

A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.

Hybrid optical source with optical proximity coupling provided by an external reflector

A tunable laser includes a reflective silicon optical amplifier (RSOA) with a reflective end and an interface end and an array of narrow-band reflectors, which each have a different center wavelength. It also includes a silicon-photonic optical switch, having an input port and N output ports that are coupled to a different narrow-band reflector in the array of narrow-band reflectors. The tunable laser also includes an optical waveguide coupled between the interface end of the RSOA and the input of the silicon-photonic optical switch. The frequency of this tunable laser can be tuned in discrete increments by selectively coupling the input port of the silicon-photonic optical switch to one of the N output ports, thereby causing the RSOA to form a lasing cavity with a selected narrow-band reflector coupled to the selected output port. The tunable laser also includes a laser output optically coupled to the lasing cavity.

Fast tunable hybrid laser with a silicon-photonic switch

The disclosed embodiments provide a tunable laser that includes a set of M reflective silicon optical amplifiers (RSOAs) and a set of N narrow-band reflectors. It also includes a silicon-photonic optical switch, having M amplifier ports, which are coupled through a set of M optical waveguides to the set of M RSOAs, and N reflector ports, which are coupled to the set of N narrow-band reflectors. The tunable laser also includes a switching mechanism that facilitates coupling at least one selected amplifier port from the M amplifier ports with a selected reflector port from the N reflector ports, thereby causing an RSOA coupled to the selected amplifier port to form a lasing cavity with a narrow-band reflector coupled to the selected reflector port. The tunable laser also includes a laser output, which is optically coupled to the lasing cavity.

Scalable fast tunable Si-assisted hybrid laser with redundancy

A photonic integrated circuit (PIC) is described. This PIC includes a grating coupler for surface-normal coupling that has an alternating pattern of grating teeth and grating trenches, where the grating trenches are filled with an electro-optical material. By applying an electric potential to the grating teeth, the index of refraction of the electro-optical material can be modified.

Tunable silicon grating couplers

An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.

Growing community of inventors

San Diego, CA, United States of America

Jin Yao