Goldstar Electron Co., Ltd.

Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Jin Y Chung

Deog Y Kwak

Jong Soo Jurng

Byoung Chan Kim

Min Young Song

Gi Bong Jeong

Kyu Man Lee

Yeon Seok Kim

Chang M Khang

Dong Wook Seo

Provided are a single-stranded nucleic acid aptamer simultaneously and specifically binding to various types of microorganisms, and a method of manufacturing the nucleic acid aptamer. For example, provided are a probe that is capable of simultaneously detecting or diagnosing a variety of microorganisms, and a method of manufacturing an aptamer having characteristics of such a probe.

Universal nucleic acid aptamers for commonly binding to various types of microorganisms and method of producing the same

Provided is a single-stranded nucleic acid aptamer specifically binding to, and a method for detectingby using the same. The aptamer of the present disclosure, and a method, a composition, a kit or a sensor of using the same may be used to specifically detectpresent in an aqueous environment, foods, and medical samples and also be applied in fields such as sanitary conditions of foods and medical diagnosis.

[object Object]

A receiver includes a frequency converter configured to generate a I signal and a Q signal from each band of a multiband signal and a mismatch compensator configured to estimate a mismatch of the I signal and the Q signal for each of the bands of the multiband signal and store at least one compensation value to compensate for the estimated mismatch. The frequency converter compensates for the mismatch of the I signal and the Q signal based on the at least one compensation value.

Receiver capable of compensating for mismatch of I signal and Q signal and communication system including the same

A method for controlling operation of a receiver may include: generating an operation control signal based on a signal-to-noise ratio (SNR) value of an Nsymbol, wherein N is a natural number, of a hopping pattern included in a preamble of a packet; and controlling whether an Nsymbol of each hopping pattern included in a header or payload of the packet may be processed in response to the operation control signal. A receiver may include: an operation control signal generator that may generate an operation control signal based on a signal-to-noise ratio (SNR) value of an Nsymbol, where N is a natural number, of a hopping pattern included in a preamble of a packet; and a receiving unit that may control whether an Nsymbol of each hopping pattern included in a header or payload of the packet is processed in response to the operation control signal.

Receivers and methods for controlling operation of receivers

A variable operation speed MOS transistor having a source, a drain and a gate with a plurality of contacts formed thereon. One end of the gate of the variable operation speed MOS transistor is connected to drains/sources of first MOS transistors, while the plurality of the contacts formed on the gate of the variable operation speed MOS transistor are connected to the drains/sources of second MOS transistors, which are of an opposite type to that of the first MOS transistors, and the source or drains of which are connected to Vcc. Input signals are supplied to the respective gates of the first and second MOS transistors in such a manner as to adjust the turn-on and turn-off speeds of the variable operation speed MOS transistor.

Variable operation speed MOS transistor

A back-bias voltage generating circuit of a semiconductor device having a driving signal generating portion for receiving oscillating signals from an oscillator such as a ring oscillator and generating alternating high and low driving signals, a first pumping portion for charging the input driving signal at one electrode of a pumping capacitor so as to produce a voltage at the other electrode of the pumping capacitor lower than a back-bias voltage, a second pumping portion for charging another input driving signal at one electrode of a second pumping capacitor so as to produce a voltage at the other electrode of the second pumping capacitor lower than a back-bias voltage, a first switching portion being turned on by a voltage higher than a back-bias voltage and connecting the other electrode of the pumping capacitor to a back-bias voltage terminal when the voltage of this electrode is below the back-bias voltage, and a second switching portion being turned on by a voltage higher than a back-bias voltage and connecting the other electrode of the second pumping capacitor to a back-bias voltage terminal when the voltage of the second pumping portion is below the back-bias voltage.

Dual back-bias voltage generating circuit with switched outputs

A back bias generating circuit comprising a ring oscillator for generating a signal of alternating current waveform, a back bias generating section for generating a back bias voltage, the back bias generating section including first through third inverter gates for respectively inverting an output voltage from the ring oscillator, a pumping capacitor for inputting an output voltage from the third inverter gate at its one terminal, and a switching transistor for applying an output voltage at the other terminal of the pumping capacitor to a back bias terminal, the other terminal of the pumping capacitor being controlled, in accordance with a level of the output voltage from the ring oscillator, such that it is connected to a ground terminal to generate the back bias voltage, and switching transistor control section for controlling a voltage to be applied to the gate of the switching transistor in accordance with a level of the output voltage from the ring oscillator. In accordance with the present invention, the back bias generating circuit can reduce amount of electrons being injected from the pumping capacitor into a substrate so that malfunction of cells can be prevented, it is suitable for high speed operation and current consumption therein can be reduced.

Growing community of inventors

Seoul, South Korea

Jin Y Chung