Samsung Electronics Co., Ltd.

Lg Innotek Co., Ltd.

International Business Machines Corporation

Globalfoundries Inc.

Korea University Industrial Academic Collaboration Foundation

Samsung Display Co., Ltd.

Sk Innovation Co., Ltd.

Soongsil University

Institute for Advanced Engineering

Korea Western Power Co., Ltd.

Korea Railroad Research Institute

Jin Wook Lee

Hun Il Lim

Won Keun Kong

Gene Moo Lee

Sun Kyung Kim

Su Myeon Kim

David V Horak

Shom Ponoth

Hyun Kyong Cho

Hyun Don Song

Kwan Heum Lee

Kyung Soo Lim

Sang Bin Lee

Sung Joon Park

Sun Shin An

Kwang Yong Yang

Byeong Chan Lee

Kwang-Young Lee

Jong Ki Jung

Yoon Hae Kim

Balasubramanian Pranatharthiharan

Xiuyu Cai

Seung Hwan Kim

Dae Sung Kim

Joon Goo Hong

Dong Il Kim

Yongjin Kim

Dohyoung Kim

Tae Kyun Kim

Pankwi Park

Younjoung Cho

Yoonhae Kim

Charan Veera Venkata Satya Surisetty

Daniel T Pham

Ki Man Kang

Gyoo Tae Kim

Keum Seok Park

Myeongcheol Kim

Jeongho Yoo

Sam Ryong Park

Seung Jong Lee

Wonwoong Chung

Su-myeon Kim

Myong Jong Kwon

Yong Il Lee

Myung Il Kang

Chang Shin Park

Sooyeon Jeong

Eun Ju Hong

Mijeong Kim

Yee Rang Hong

Yun Gi Kim

Myung Ii Kang

In Su Cho

Daniel Thanh Khae Pham

Yeonock Han

Bala Subramanian Pranatharthi Haran

Seok Woo Chung

Yongseung Yun

Byung Koo Kong

Ihn Gee Baik

Changeun Jang

Jin-Soo Mun

Sang Hui Park

Sung Won David Roh

Young Don Yoo

Seong Hyeok Lee

An operating method of a storage controller includes receiving a permanent write protection command; checking a distribution of first data included in a target namespace corresponding to the permanent write protection command; setting at least one memory region as a protected memory region, based on at least one metric corresponding to each of a plurality of non-volatile memory devices; and migrating at least a portion of the first data, which is stored in a remaining memory region different from the protected memory region, to the protected memory region.

Storage device and an operating method of a storage controller thereof

A driving recognition-based regenerative braking control method of an xEV vehicle according to an embodiment of the present invention relates to a driving recognition-based regenerative braking control method of an xEV vehicle which optimally adjusts an amount of regenerative braking using preceding vehicle sensing and driving position information.

Regenerative braking control method of xEV vehicle based on driving recognition

A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Semiconductor device and method of fabricating the same

A display device includes a display panel to display an image; and a sound generator disposed on a surface of the display panel to vibrate the display panel, wherein distances between each of a plurality of side surfaces of the sound generator and each of a plurality of side surfaces of the display panel respectively corresponding to the each of the plurality of side surfaces of the sound generator are substantially equal.

Display device

A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

Gas storage cylinder, deposition system, and method of manufacturing semiconductor device

A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.

Semiconductor devices having multiple gate structures and methods of manufacturing such devices

A light emitting device having an enhanced surface property and an electrical property is provided. The light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode disposed on one side of the light emitting structure and electrically connected to the first semiconductor layer, a second electrode disposed on one side of the light emitting structure and electrically connected to the second semiconductor layer, and an ohmic contact including a first layer disposed between the second electrode and the second semiconductor layer and having aluminum (Al), a second layer including at least one MAlalloy formed by a reaction with Al included in the first layer, and a third layer disposed on the second layer and having gold (Au) is provided.

Light emitting device having first and second electrodes on one side of a light emitting structure

The present invention relates to a cylindrical non-melt and partial melt type entrained flow bed gasifier with one or more burners mounted on the top thereof for supplying pulverized raw coal and oxidizer thereto, wherein each of the burners comprises three or four pipes so as to form a central supplying line for injecting the pulverized coal with a carrier gas into the gasifier, a primary oxidizer annular region around the central supplying line having a plurality of primary oxidizer supplying bores for injecting primary oxidizer vertically or at an angle to the injection region of the pulverized coal supplied through the central supplying line so as to direct the pulverized coal to the central region, and an outer cooling annular region around the primary oxidizer annular region for flowing cooling water, which is operated preferably at a temperature range of 1,250&#x2dc;1,450&#xb0; C., or of 1,150&#x2dc;1,500&#xb0; C. according to the properties of the coal. According to the present invention, the pulverized coal and oxidizer are properly mixed, and the pulverized coal is directed towards the middle of the gasifier, so that the reaction is completed with the ash being wholly non-melted or partially melted.

Non-melt and partial melt type entrained flow bed gasifier

Integrated circuits and methods of forming integrated circuits are provided. An integrated circuit includes a gate electrode structure overlying a base substrate. The gate electrode structure includes a gate electrode, with a cap disposed over the gate electrode and sidewall spacers disposed adjacent to sidewalls of the gate electrode structure. A source and drain region are formed in the base substrate aligned with the gate electrode structure. A first dielectric layer is disposed adjacent to the sidewall spacers. The sidewall spacers and the cap have recessed surfaces below a top surface of the first dielectric layer, and a protecting layer is disposed over the recessed surfaces. A second dielectric layer is disposed over the first dielectric layer and the protecting layer. Electrical interconnects are disposed through the first dielectric layer and the second dielectric layer, and the electrical interconnects are in electrical communication with the respective source and drain regions.

Integrated circuits having gate cap protection and methods of forming the same

The present invention provides a top-feeding double-swirl type gasifier: a feed line through which pulverized coal is supplied by nitrogen; a distributor for dividing the pulverized coal supplied; a plurality of burner nozzles for supplying the pulverized coal, divided in the distributor, and an oxidizer; a pressure reactor in which the pulverized coal and the oxidizer react with each other to produce a flow of synthesis gas; and a swirl generator for imparting a swirling force to the oxidizer which is fed into the pressure reactor, the gasifier further comprising a slag cooling and storing container placed beneath the pressure reactor. Each of the burner nozzles consists of a triple tube having a circular cross section. The pulverized coal and carrier gas are supplied to the most central region of the burner nozzle, and an oxidizer is supplied to an annular regionsurrounding the central region.

Top-feeding double-swirl type gasifier

A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode.

Light emitting device and light emitting device package

A method of forming a semiconductor structure includes forming a metal gate above a semiconductor substrate and gate spacers adjacent to the metal gate surrounded by an interlevel dielectric (ILD) layer. The gate spacers and the metal gate are recessed until a height of the metal gate is less than a height of the gate spacers. An etch stop liner is deposited above the gate spacers and the metal gate. A gate cap is deposited above the etch stop liner to form a bi-layer gate cap. A contact hole is formed in the ILD layer adjacent to the metal gate, the etch stop liner in the bi-layer gate cap prevents damage of the gate spacers during formation of the contact hole. A conductive material is deposited in the contact hole to form a contact to a source-drain region in the semiconductor substrate.

Bi-layer gate cap for self-aligned contact formation

Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than &#x3bb;/n, and the second period being identical to or smaller than &#x3bb;/n, where n is a refractive index of the first conductive semiconductor layer, and &#x3bb; is a wavelength of light emitted from the active layer.

Light emitting device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Jin Wook Lee