Samsung Electronics Co., Ltd.

Ceragem Medisys Inc.

Jin-woo Lee

Hyeoung-won Seo

Cheol-Ju Yun

Dae-woong Han

Yong-sung Kim

Hyun-Sang Park

Tae-young Chung

Dong-won Shin

Yoo-sang Hwang

Mi-hyang Lee

Hye-Jin Jung

Kyung-chun Kim

A mobile X-ray imaging apparatus includes a first column rotatably coupled to a main body and extending in one direction; a second column extending in the one direction and slidably coupled to the first column in an extension direction of the first column; a display provided in the main body; and a indicator arranged in one end of the second column.

Mobile x-ray imaging apparatus

Mobile X-ray imaging apparatus

A display driving circuit includes a first bias circuit, a second bias circuit, a selector, and an output buffer. The first bias circuit generates a first bias voltage set. The second bias circuit generates a second bias voltage set. The selector selects one of the first and second bias voltage sets based on a bias selection signal. The output buffer buffers a grayscale voltage corresponding to display data and outputs the buffered grayscale voltage The output buffer is biased based on the first or second bias voltage set selected by the selector.

Display driving circuit and display driving method

A method of producing a biomaterial measuring device is disclosed. The method includes forming a plurality of reactions elements, to which an assay reagent is applied, on a first substrate, cutting the resulting first substrate in a unit of individual reaction element, and attaching a first substrate piece, which is formed by cutting the resulting first substrate in the unit of individual reaction element, to a predetermined portion of a second substrate. In the biomaterial measuring device, since a material cost in minimized and it is easy to automate production, it is possible to reduce a production, it is possible to reduce a production cost.

Biomaterial measuring device and manufacturing method thereof

A semiconductor device comprises a plurality of gate structures formed on a substrate, a gate spacer formed on a sidewall of the gate structures, a semiconductor pattern formed on the substrate between the gate structures, a first impurity region and a second impurity region formed in the semiconductor pattern and at surface portions of the substrate, respectively, wherein the first and second impurity regions include a first conductive type impurity, and a channel doping region surrounding the first impurity region, wherein the channel doping region includes a second conductive type impurity.

Dynamic random access memory device

Semiconductor device and method of manufacturing the same

Disclosed is a dynamic random access memory (DRAM) comprising a transistor having channel holes formed in the channel region thereof and cell gate structures formed in the channel holes. At least three layered impurity regions are formed in a semiconductor substrate between the channel holes and the at least three layered impurity regions form a source region for the transistor.

DRAM having at least three layered impurity regions between channel holes and method of fabricating same

Method of manufacturing a semiconductor memory device including a transistor

Methods of forming FRAM devices include the steps of forming first and second field effect access transistors in a semiconductor substrate, forming first and second bit lines (BL) electrically coupled to a drain region of the first field effect access transistor and a drain region of the second field effect access transistor, respectively, and forming first and second ferroelectric capacitors (C,) between the first and second bit lines in order to improve integration density. These first and second ferroelectric capacitors share a first electrode extending between the first and second bit lines and have respective second electrodes electrically coupled to respective source regions of the first and second field effect access transistors. The preferred methods may also include the step of forming a field oxide isolation region adjacent a face of the substrate and extending between the first and second field effect access transistors. In addition, a step may be provided to form a first interlayer dielectric layer on the first and second field effect access transistors and on the field oxide isolation region. The step of forming the first and second ferroelectric capacitors may also comprise the preferred steps of forming a first conductive layer on the first interlayer dielectric layer, forming a ferroelectric dielectric layer (e.g., PZT, PLZT) on the first conductive layer, forming a second conductive layer on the ferroelectric dielectric layer, patterning the second conductive layer and the ferroelectric dielectric layer using a first mask to define the second electrodes of the first and second ferroelectric capacitors and then patterning the first conductive layer using a second mask to define the first electrode which is shared by the first and second ferroelectric capacitors.

Methods of forming ferroelectric random access memory devices having shared capacitor electrodes

A ferroelectric memory device formed on a microelectronic substrate is evaluated. The memory device includes a sense amplifier and a plurality of ferroelectric capacitors that are operatively connected to the sense amplifier to read information stored in the ferroelectric capacitors. A plurality of test ferroelectric capacitors is formed on the microelectronic substrate. Polarization characteristics are determined for the plurality of test ferroelectric capacitors. An input to the sense amplifier is estimated from the determined polarization characteristics, and the ferroelectric memory device is evaluated based on the estimated input. The estimated input may be compared to an input criterion, e.g., a minimum sensing charge or voltage for the sense amplifier, and the ferroelectric memory device may be either rejected or subjected to further testing depending on whether the estimated input fails to meet or meets the input criterion.

Growing community of inventors

Suwon-si, South Korea

Jin-woo Lee