Magnachip Semiconductor, Inc.

Inje University Industry-academic Cooperation Foundation

Samsung Electronics Co., Ltd.

Hyundai Motor Company

Samsung Electro-mechanics Co., Ltd.

Kia Motors Corporation

Hyundai Sungwoo Casting Co Ltd

Seohan Industry Co., Ltd.

Jin Woo Han

Jae Young Lee

Won Sun Park

Na Ri Kim

Byeong Cheol Moon

Soo Hwan Son

Young Kwan Kim

Dong Hwan Lee

Jae Hoon Lee

Chan Young Yoon

Myeong Gil Kim

Byung Ryel In

Deok Jin Kim

Kyung Wook Kim

Yong Won Lee

Dae Won Hwang

Mohamad Warda

Hyoung Kyu Kim

Young Gyu An

Hye Yeon Cha

Ho Young Kim

Ji Min Kim

Woong Lin Hwang

Byung Chan Lee

Tae Sang Park

Yoon Cheol Kim

Min Gyun Chung

Nikolay Nifantiev

Yoon Joo Rhee

Sung Hwan Jang

Jeong Ho Shin

Jae Seok Lee

Dmitry Vladimirovich Yashunsky

Larisa K Shubina

Seung Hun Jeong

Kee Yeon Cho

Joon Sang Kim

In-Sung Song

Nari Kim

Tatyana N Makarieva

Valentin A Stonik

Dae-Young Hur

Hyun Joo

Jae-Boum Youm

Na-Ri Kim

Myung Sung Choi

Young Jae Kim

Young-Shik Park

Jae-Hong Ko

A motor assembly comprises a stator, a rotor configured to be rotated about a shaft by electromagnetically interacting with the stator, an impeller configured to be rotated with the rotor about the shaft by being coupled to the rotor and configured to suction air in response to a rotation, a housing configured to cover between the impeller and the stator by being coupled to the stator, a cover comprising an inlet through which air sucked by the impeller is introduced, and configured to cover the impeller, a guide member configured to guide the air discharged from the impeller and configured to be coupled to the housing, and a plurality of first vanes protruding from one of the cover and the guide member to an axial direction and coupled to the other of the cover and the guide member. The cover and the guide member are configured to be movable in the axial direction in response to not being coupled to the housing, and the cover comprises a contact portion in contact with the impeller according to a position of the cover. The contact portion is spaced apart from the impeller in response to coupling between the guide member and the housing.

Motor assembly, method of manufacturing the same and a cleaner having the same

A brake disc, in which a hat part that is mounted on a hub and a disc part that provides friction surfaces with brake pads are made of different materials and are combined, includes: a plurality of bridges protruding and circumferentially arranged around an edge of the hat part for coupling to the disc part; a plurality of vanes defining a channel for air flow; and a plurality of coupling pillars, which are fixedly in contact with the bridges, respectively, arranged between a pair of disc plates. The coupling pillars are fixedly in contact with both sides of the bridges while exposing front ends of the bridges.

Brake disc

A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.

Semiconductor device and manufacturing method thereof

The present invention relates to novel pyridine nucleoside compounds, Neopetroside A (NPS A) and Neopetroside B (NPS B) obtained by fractionating an extract ofsp. which is a marine sponge, with ethanol, into n-butanol (n-BuOH). When the NPS A was treated with myocardial cells, it activates oxidative phosphorylation, basal and mitochondrial respiration induced by ATP and ATP synthesis, and stimulates the glycolysis activity and when the NPS A was treated with an ischemic reperfusion injury model, the left ventricular pressure injured by ischemic reperfusion was recovered and the size of myocardial injury site was significantly reduced and as a result, can be provided as the pharmaceutical composition for preventing or treating ischemic heart disease or the health functional food for preventing or improving the same.

Neopetrosides A and B, and synthesis method thereof

A chip electronic component may include a magnetic material body including an insulating substrate and coil conductor patterns formed on at least one surface of the insulating substrate, and external electrodes disposed on both end portions of the magnetic material body so as to be connected to end portions of the coil conductor patterns, respectively. In a cross section of the magnetic material body in a length direction, a thickness of an innermost loop/section of the coil conductor patterns may be smaller than a thickness of the remaining loops/sections of the coil conductor pattern.

Chip electronic component and board for mounting thereof

A composite electronic component includes a composite body in which a capacitor and an inductor are coupled to each other, the capacitor including a ceramic body including a plurality of dielectric layers and first and second internal electrodes, and the inductor including a magnetic body including a coil part. An input terminal is disposed on a first side surface of the composite body and is connected to the coil part. An output terminal includes a first output terminal disposed on the first side surface of the composite body and connected to the coil part and a second output terminal disposed on a first end surface of the composite body and connected to the first internal electrodes. A ground terminal is disposed on a second end surface of the composite body and is connected to the second internal electrodes. The capacitor is coupled to a side surface of the inductor.

Composite electronic component and board having the same

The present disclosure relates to a semiconductor device in which a trench termination structure is applied. There is disclosed a semiconductor device of which structure is partially improved so that a P body area is not formed in an adjacent area of a gate pad. The semiconductor device includes a gate pad formed on a substrate, an active area formed in the substrate and comprising trenches, an isolation area to isolates the gate pad and the active area, and a section of the active area adjacent to the gate pad where a P-body is not formed. According to such the semiconductor device, it is possible to minimize a drain-source leakage current and to stably secure a drain-source breakdown voltage.

Semiconductor device with trench termination structure

A composite electronic component may include a composite body including a capacitor and an inductor coupled to each other; an input terminal formed on a first end surface of the composite body and connected to the coil part of the inductor; an output terminal including a first output terminal formed on a second end surface of the composite body and connected to the coil part of the inductor and a second output terminal formed on the second end surface of the composite body and connected to the first internal electrode of the capacitor; and a ground terminal formed on a first end surface of the capacitor in the composite body. The capacitor may be coupled to a side surface of the inductor, and the sum of ratio of lengths of a short axis to a long axis of the coil part is 0.7 to 1.0.

Composite electronic component and board for mounting thereof

The present disclosure relates to a semiconductor device. Such a semiconductor device includes a trench metal-oxide-semiconductor (MOS) transistor having two or more electrodes in a trench formed on a substrate of the semiconductor, where a part of a shield electrode positioned at a bottom of the trench is formed to have a large thickness, and a groove is formed in a gate electrode that is stacked on the shield electrode, such that a part of the shield electrode protrudes to a surface of the semiconductor device so as to be connected with a source power. In such a manner, by minimizing a region in which the shield electrode and the gate electrode overlap, a region that decreases problematic effects, such as leakage current of gate/source or gate/drain of a trench MOS transistor, and a region where high difference of a gate electrode is generated, are removed.

Semiconductor device having a minimized region of sheild electrode and gate electrode overlap

A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a substrate comprising a trench; a first electrode disposed below the trench; a second electrode disposed above the trench, a first insulating layer being disposed between the first electrode and the second electrode; a first contact arranged in a first direction of the substrate and connected to the first electrode; and a second contact arranged in second direction that is different from the first direction, the second contact being connected to the second electrode.

Semiconductor device and fabricating method thereof

A rotor having an improved structure capable of achieving enhanced durability is disposed in a motor, the rotor including a sleeve having a shaft hole, through which a motor shaft extends, rotor cores spaced apart from one another in a circumferential direction of the rotor, and permanent magnets each disposed between adjacent ones of the rotor cores such that the permanent magnets are arranged in a radial manner about the sleeve. First and second cover plates may be disposed at opposite sides of the permanent magnets in an axial direction. Each of the first and second cover plates may include a shaft receiving hole to receive the motor shaft. The rotor may include a plurality of support members each having a magnet support portion arranged to support an outer end of a corresponding one of the permanent magnets in a radial direction of the rotor.

Motor and rotor thereof

There is provided a semiconductor device. The semiconductor device includes a plurality of trench transistors in an active region, and an interconnection disposed in an edge region, the interconnection configured to transfer a voltage to the plurality of trench transistors, in which the edge region comprises a substrate, a first insulating layer, a first electrode, a second insulating layer, and a second electrode, disposed in that order.

Semiconductor device

A rotor having an improved structure capable of achieving an enhancement in durability and a motor having the rotor are disclosed. The rotor is configured to co-operate with a stator in an electromagnetic manner such that the rotor rotates. The rotor includes a sleeve having a shaft hole, through which the motor shaft extends, rotor cores spaced apart from one another in a circumferential direction of the rotor, and at least one of permanent magnets disposed between adjacent ones of the rotor cores such that the permanent magnets are arranged in a radial manner about the sleeve. First and second cover plates are disposed at opposite sides of the permanent magnets in an axial direction. The first and second cover plates have plate holes respectively corresponding to the through holes of the rotor cores. The rotor cores and the first and second cover plates are coupled by fastening members.

The present invention relates to mitochondrial protein that can be used as a marker for diagnosing stomach cancer. According to the present invention, the marker for diagnosing stomach cancer comprises mitochondrial enoyl coenzyme A hydratase 1.

Mitochondrial enoyl coenzyme A hydratase 1 as marker for diagnosing stomach cancer

Growing community of inventors

Bucheon-si, South Korea

Jin Woo Han