Samsung Electronics Co., Ltd.

Eo Technics Co., Ltd

Jin Won Ma

Young Seok Kim

Jae Hee Lee

Tae Hee Han

Joo Yong Lee

Nam Hoon Lee

Bong Hyun Kim

Dae Young Moon

Bong Ju Lee

Ja Min Koo

Byung Joo Oh

Ill Hyun Park

Kyu Wan Kim

Chang Seong Hong

Nam Ki Cho

A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

Method for fabricating a semiconductor device having a single crystal storage contact

Semiconductor device including a single crystal contact

Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

Monitoring device, monitoring method and method of manufacturing semiconductor device using reflectivity of wafer

Growing community of inventors

Hwaseong-si, South Korea

Jin Won Ma