Industry-University Cooperation Foundation Hanyang University

Basf Coatings Gmbh

Jin Won Jung

Myung Mo Sung

Kyu Seok Han

Lynn Lee

Hong Bum Kim

Boram Cho

Michael Reinke

Jong Chan Kim

Described herein is a transparent conductive film including

Transparent conductive film

Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.

Method for manufacturing single-crystal semiconductor layer, structure comprising single-crystal semiconductor layer, and semiconductor device comprising structure

A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

Stabilized metal monolayer structure

Growing community of inventors

Seoul, South Korea

Jin Won Jung