Samsung Electronics Co., Ltd.

Jin-Won Jeong

Hyeon-Woo Jang

Sunyoung Park

Keunnam Kim

Sun-Young Park

Hyeong-sun Hong

Chang-Hyun Cho

Hyeongsun Hong

Keun-Nam Kim

Kye-Hee Yeom

Soo-ho Shin

Changhyun Cho

Kyehee Yeom

Wonchul Lee

Won-chul Lee

Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.

Methods of fabricating semiconductor devices

A semiconductor device includes a plurality of bit lines that intersect an active region on a substrate and extend in a first direction, a contact pad formed on the active region between adjacent bit lines, and a plurality of spacers disposed on sidewalls of the plurality of bit lines. An upper portion of the contact pad is interposed between adjacent spacers, and a lower portion of the contact pad has a width greater than a distance between adjacent spacers.

Semiconductor device

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include storage node pads disposed adjacent to each other between word lines but spaced apart from each other by an isolation pattern. Accordingly, it is possible to prevent a bridge problem from being caused by a mask misalignment. This enables to improve reliability of the semiconductor device.

Semiconductor device and method of fabricating the same

Semiconductor device including contact pads

Semiconductor devices

A semiconductor device includes an interlayer insulating layer on a substrate, and a direct contact (DC) structure vertically penetrating the interlayer insulating layer and contacting the substrate, the DC structure including a DC hole exposing the substrate, an insulating DC spacer on an inner wall of the DC hole, and a conductive DC plug on the DC spacer and filling the DC hole, the DC plug including a lower DC plug and an upper DC plug on the lower DC plug, the lower DC plug having a smaller horizontal width than that of the upper DC plug.

Semiconductor device having DC structure

Growing community of inventors

Seoul, South Korea

Jin-Won Jeong