Lg Electronics Inc.

Shangrao Jinko Solar Technology Development Co., Ltd

Shangrao Xinyuan Yuedong Technology Development Co. Ltd.

Jingao Solar Co., Ltd.

Jin-Won Chung

Kwangsun Ji

Yujin Lee

Yu Jin Lee

Seh-Won Ahn

Seongtak Kim

Discussed is a tandem solar cell manufacturing method including etching a crystalline silicon substrate, whereby a solar cell can be obtained which does not have a pyramid-shaped defect on a surface of the substrate, inhibits the generation of a shunt through the substrate having excellent surface roughness properties, and can secure fill factor properties, the solar cell being capable of being obtained through the tandem solar cell manufacturing method. The method includes preparing a crystalline silicon substrate; performing an isotropic etching process of the substrate; and removing a saw damage on a surface of the substrate by performing an anisotropic etching process of the isotropically etched substrate.

Tandem solar cell manufacturing method

The present invention relates to a method for manufacturing: a perovskite solar cell in which the laminated shape and the composition of a perovskite absorbing layer are controlled; and a tandem solar cell comprising the perovskite solar cell, and the perovskite absorbing layer is formed through a method for manufacturing a solar cell, comprising the steps of: forming, on a substrate, an inorganic seed layer conformal with the substrate by using a BO source, an A-doped BO source or an AxOy source and the BO source; and supplying organic halides onto the seed layer, and thus a perovskite thin film having a complex composition conformal with the substrate can be formed such that an effect of enabling light absorption to increase can be achieved.

Method for manufacturing solar cell

A method for manufacturing a solar cell, includes forming an oxide layer on first surface of a single crystalline silicon substrate; forming a poly crystalline silicon layer doped with a first dopant having a first conductive type on the oxide layer; diffusing a second dopant having a second conductive type opposite to the first conductive type into a second surface of the single crystalline silicon substrate thereby forming a diffusion region; forming a first passivation layer on the poly crystalline silicon layer; forming a second passivation layer on the diffusion region; forming a first electrode connected to the poly crystalline silicon layer by printing a first paste on the first passivation layer and firing through; forming a second electrode connected to the diffusion region by printing a second paste on the second passivation layer and firing through.

Solar cell and method for manufacturing the same

A solar cell includes a semiconductor substrate containing impurities of a first conductive type; a tunnel layer positioned on the semiconductor substrate; an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type; a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type; a first electrode connected to the semiconductor substrate; and a second electrode configured to pass through the dopant layer, and connected to the emitter region.

A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the semiconductor substrate, an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type, a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type, a first electrode connected to the semiconductor substrate, and a second electrode configured to pass through the dopant layer and connected to the emitter region.

Growing community of inventors

Seoul, South Korea

Jin-Won Chung