Xiamen University

Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Beijing Wantai Biological Pharmacy Enterprise Co., Ltd.

Xiamen Innovax Biotech Co., Ltd.

Xiamen Innodx Biotech Co., Ltd.

Jin Wang

Jun Zhang

Ningshao Xia

Duxiang Wang

Chun-Yi Wu

Shaowei Li

Ying Gu

Chunyan Yang

Ching-Shan Tao

Yi-an Lu

Chaoyu Wu

Shengxiang Ge

Jingfeng Bi

Feihai Xu

Du-Xiang Wang

Chun Kai Huang

Chun-I Wu

Senlin Li

Shiyin Zhang

Jinjie Li

Chih-Hung Hsiao

Chun-Kai Huang

Yun Zhang

A light emitting diode includes an n-type confinement layer, a quantum well active layer formed on the n-type confinement layer, a p-type confinement layer formed on the quantum well active layer, a gallium phosphide-based quantum dot structure formed in the p-type confinement layer, and a GaP-based current spreading layer formed on the GaP-based quantum dot structure. A method of manufacturing the light emitting diode is also provided.

Light emitting diode and method of manufacturing the same

The invention relates to a truncated L1 protein of the Human Papillomavirus Type 11, a virus-like particle consisting of the protein, a vaccine comprising said virus-like particle, and the use of the vaccine in the prevention of condyloma acuminatum or HPV infections.

Truncated L1 protein of human papillomavirus type 11

Disclosed are a reaction tube for nucleic acid amplification capable of controlling a liquid circulation path, a reaction apparatus for nucleic acid amplification comprising the reaction tube, and a method for amplifying nucleic acid comprising a step of using the reaction tube. Also disclosed are a kit comprising the reaction tube, and use of the reaction tube in preparation of a kit.

Reaction tube for nucleic acid amplification capable of controlling liquid circulation path

A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.

Fabrication method of vertical light-emitting diode

An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type cladding layer, a buffer layer, a GaAs substrate and an N-type ohmic electrode. The N-type cladding layer and the P-type cladding layer or either of them is InGaAs. The cladding layer of InGaAs, due to low resistance, can improve current expansion, reduce voltage and improve light-emitting efficiency.

Infrared light emitting diode

A light emitting diode includes: a substrate; a semiconductor light emitting laminate on the substrate, including from bottom up a first semiconductor layer, an active layer, and a second semiconductor layer electrically dissimilar to the first semiconductor layer; a transparent conductive layer with an opening portion; the first electrode electrically connected with the first semiconductor layer; and the second electrode electrically connected with the second semiconductor layer; the second electrode fills the opening portion, and the position where the second electrode contacts the transparent conductive layer is arranged with a recessed portion, and the second electrode is embedded in the transparent conductive layer. The recessed portion is formed on the second electrode, having the second electrode embedded in the transparent conductive layer, increasing the counter force of the second electrode against the horizontal thrust during encapsulation of the LED structure and avoiding detachment during wire bonding for encapsulation.

Light emitting diode

Growing community of inventors

Xiamen, China

Jin Wang