Samsung Electronics Co., Ltd.

Jin-Tae No

Young-Seok Kim

Jae-young Ahn

Jin-Gyun Kim

Hong-suk Kim

Yong-Woo Hyung

Man-Sug Kang

Hee-Seok Kim

Sang-Ryol Yang

Ju-Wan Lim

Sung-Hae Lee

A method for forming a low-k dielectric layer for a semiconductor device using an ALD process including (a) forming predetermined interconnection patterns on a semiconductor substrate, (b) supplying a first and a second reactive material to a chamber having the substrate therein, thereby adsorbing the first and second reactive materials on a surface of the substrate, (c) supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, (d) supplying a third reactive material to the chamber, thereby causing a reaction between the first and second materials and the third reactive material to form a monolayer, (e) supplying a second gas to the chamber to purge the third reactive material that remains unreacted in the chamber and a byproduct; and (f) repeating (b) through (e) a predetermined number of times to form a SiBN ternary layer having a predetermined thickness on the substrate.

Method for forming a low-k dielectric layer for a semiconductor device

Growing community of inventors

Suwon-si, South Korea

Jin-Tae No