Samsung Electronics Co., Ltd.

Jin-sun Lee

Youn-soo Kim

Sun-Min Moon

Jae-hyoung Choi

Se-hyoung Ahn

Jae-wan Chang

Hyun-jun Kim

Han-jin Lim

Yong-jae Lee

Se-hoon Oh

Jae-Soon Lim

Gyu-Hee Park

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

Semiconductor device and method of manufacturing the same

A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300&#xb0; C. to about 600&#xb0; C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300&#xb0; C. to about 600&#xb0; C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

Method of forming thin film and method of manufacturing integrated circuit device using the same

A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Methods of forming material layer

Growing community of inventors

Seongnam-si, South Korea

Jin-sun Lee