Samsung Electro-mechanics Co., Ltd.

Jin Suk Son

Tae Kyung Lee

Ran Hee Shin

Je Hong Kyoung

Hwa Sun Lee

Sung Sun Kim

Kwang Soo Kim

Young Ki Lee

Sun Woo Yun

Sung Woo Han

Yun Sung Kang

Jeong Suong Yang

Chang Jae Heo

In Young Kang

Kyu Hwan Oh

Eun Tae Park

Joon Hyung Cho

Jin Su Kim

Moon Chul Lee

Sang Jin Kim

Chang Hyun Lim

In Wha Jeong

Seog Moon Choi

Sung Jun Lee

Jae Hyun Lim

Sang Kee Yoon

Yeong Gyu Lee

Sang Heon Han

Kee Ju Um

Jae Hoon Park

Eun Jung Jo

Young Hoon Kwak

Jong Man Kim

Kwang Su Kim

Job Ha

Chang Seob Hong

Sung Keun Park

Jong Beom Kim

Sang Hyun Yi

Min Gyu Park

Min Jae Ahn

Yong Hoon Kwak

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

Acoustic resonator and method of manufacturing the same

A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

Bulk-acoustic wave resonator

A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant 'c' to an in-plane lattice constant 'a' (c/a) of less than 1.58.

A bulk-acoustic wave resonator includes: a substrate; a seed layer disposed on the substrate, and having a hexagonal crystal structure; a bottom electrode disposed on the seed layer; a piezoelectric layer at least partially disposed on the bottom electrode; and a top electrode disposed on the piezoelectric layer, wherein either one or both of the bottom electrode and the top electrode includes a scandium (Sc)-containing aluminum alloy layer.

A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.

A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 &#x212b; and less than or equal to 1000 &#x212b;, or may be thinner than the first electrode.

A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

Film bulk acoustic resonator and method of manufacturing the same

A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer&#xd7;a concentration (at %) of the dopant]/100 is less than or equal to 80.

Bulk acoustic wave resonator

An acoustic resonator comprises a substrate, a resonant portion disposed on the substrate and in which a first electrode, a piezoelectric layer, and a second electrode are stacked, a protective layer disposed on an upper portion of the resonant portion, and a hydrophobic layer formed on the protective layer, and the protective layer comprises a first protective layer stacked on the second electrode and a second protective layer stacked on the first protective layer, wherein a density of the second protective layer is higher than a density of the first protective layer.

Acoustic resonator

An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer and having a hydrophobic layer disposed on at least one of a portion of an upper surface of the cavity and a portion of a lower surface of the cavity; and a resonating portion disposed on the cavity and having a second electrode on a piezoelectric layer on a first electrode.

Acoustic resonator and method for manufacturing the same

A bulk-acoustic wave resonator is provided. The bulk-acoustic wave resonator comprises a substrate comprising an external connection electrode; a connection layer connected to the external connection electrode and disposed on the substrate; a first electrode disposed to cover at least a portion of the connection layer; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The connection layer may be disposed to surround a cavity and may be connected to the first electrode and the second electrode.

An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.

A fine dust concentration sensor includes a bulk acoustic resonator and a cap including an upper portion with holes therein and a lateral portion connected to the upper portion to accommodate the bulk acoustic resonator. An upper surface of the upper portion of the cap is coated with a hydrophobic material.

Fine dust concentration sensor

A bulk acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the first electrode; and a second electrode disposed on the piezoelectric layer; wherein the first electrode includes an aluminum alloy layer containing scandium (Sc), and has a surface roughness of 2.4 nm or less, based on an arithmetic mean roughness.

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Suwon-si, South Korea

Jin Suk Son