Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Jin Sub Park

Jeong Tak Oh

Jae Hoon Lee

Dong Joon Kim

Je Won Kim

Sun Woon Kim

Kyu Han Lee

Young Hoon Kim

Bang Won Oh

Yung Ho Ryu

Kee Jeong Yang

Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type AlInGaN (where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;x+y&#x2266;1), a multiple quantum well-structured active layer made of undoped InGaN (where 0&#x3c;A&#x3c;1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type InGaN (where 0&#x2266;y&#x3c;1) formed on the active layer and a second layer made of p-type AlInGaN (where 0&#x3c;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x3c;x+y&#x2266;1) formed on the first layer.

Nitride based semiconductor light-emitting device

A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

Nitride semiconductor light emitting device and method of manufacturing the same

Nitride semiconductor light emitting device

A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.

Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof

Growing community of inventors

Kyungki-do, South Korea

Jin Sub Park