Korea Institute of Energy Research

Jin Su You

Ara Cho

Kee Shik Shin

Kyung Hoon Yoon

Young Joo Eo

Jun Sik Cho

Joo Hyung Park

Jae Ho Yun

Sang Hyun Park

Jihye Gwak

Seoung Kyu Ahn

Se Jin Ahn

Ki Hwan Kim

Sejin Ahn

SeoungKyu Ahn

Ji Hye Gwak

The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.

Solar cell having rear buffer layer and method of manufacturing the same

A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer(s); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s).

Method for manufacturing light absorption layer of thin film solar cell and thin film solar cell using the same

A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a CuZnSnSthin film layer; forming a CuZnSn(S,Se)thin film layer; and forming a CuZnSnSthin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

Method for manufacturing CZTS based thin film having dual band gap slope, method for manufacturing CZTS based solar cell having dual band gap slope and CZTS based solar cell thereof

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Seoul, South Korea

Jin Su You