Sk Innovation Co., Ltd.

Sk Global Chemical Co., Ltd.

Korea Advanced Institute of Science and Technology

Sk Energy Co., Ltd.

Sk-materials Co., Ltd.

Jin Su Ham

Kwang Kuk Lee

Sun Young Kim

Jong Ho Lim

Nam Kyu Lee

Min Ho Jung

Soo Young Hwang

Yu Na Shim

Jong Chan Kim

Han Sol Lee

Hyo Seung Park

Yeon Sik Jung

Jin Sung Kim

Yoon Hyung Hur

Kyun Phyo Lee

Seung Won Song

Cheol Woo Kim

Tae Wook Kwon

Min Kyoung Kim

Chang Kuk Kim

Jae Hoon Kwak

Jong Ho Lee

Sun Joo Kim

Seong Il Lee

Je Ho Lee

Su Jin Lee

Ki Nam Chung

Ki Seok Choi

Min Hoe Yi

Seung Yon Oh

Joon Sik Lee

Sung Gi Lee

Eun Hee Park

Hye Ryoung Lee

Dong Seok Jang

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Random copolymer, laminate, and method for forming pattern

The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 for forming a neutral layer for significantly reducing process time and process costs, and promoting directed self-assembly pattern formation of a block copolymer. The present invention further provides a laminate for forming a pattern including a neutral layer having a small thickness variation value due to washing, by including the random copolymer for forming a neutral layer. The present invention further provides a method for forming a pattern capable of stably vertically orienting a block copolymer on a laminate for forming a neutralized pattern.

Random copolymer for forming neutral layer, laminate for forming pattern including the same, and method for forming pattern using the same

An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1: wherein A is an n-valent radical, L is C-Chydrocarbylene, Rto Rare independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which Rto Rexist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.

Etchant composition and silane compound

Provided is a method of preparing poly(alkylene carbonate) using a molecular weight regulator in a process of preparing a copolymer of carbon dioxide/epoxide using a novel complex synthesized from salen-type ligand including a quaternary ammonium salt as a catalyst. According to the present invention, even though the molecular weight regulator is used, an activity of the catalyst may be stably maintained, whereby the low molecular weight of poly(alkylene carbonate) having a desirable level may be effectively provided. In addition, it is expected that since the novel complex as the catalyst of the present invention has a simple structure as compared to the existing copolymerization catalyst, due to the economical preparation cost thereof, the novel complex may be effectively applied to a large-scale commercial process.

Method of preparing poly(alkylene carbonate) via copolymerization of carbon dioxide/epoxide in the presence of novel complex

Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity and planarization characteristics, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition

Provided are an electrolyte for a lithium secondary battery and a lithium secondary battery containing the same.

Electrolyte for lithium secondary battery and lithium secondary battery containing the same

Disclosed is a method of removing metals from hydrocarbon oil, comprising: supplying a feed including hydrocarbon oil; mixing the feed with an aqueous solution including a metal scavenger to prepare a first mixture; separating the first mixture into a first aqueous solution phase and a first hydrocarbon phase and discharging the separated first aqueous solution phase; mixing the separated first hydrocarbon phase with washing water to produce a second mixture; separating the second mixture into a second aqueous solution phase and a second hydrocarbon phase; and recovering the separated second hydrocarbon phase and recirculating the separated second aqueous solution phase.

Method for removing metal from hydrocarbon oil

Provided is a diblock copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2: 

Diblock copolymer containing fluorine group

Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2: 

Method of forming fine patterns using block copolymer

Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity, planarization characteristic, and excellent thermal resistance, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

Provided are an electrolyte for a high-voltage lithium secondary battery and a high-voltage lithium secondary battery containing the same, and more particularly, an electrolyte for a high-voltage lithium secondary battery which may not be oxidized and decomposed at the time of being kept at a high voltage and a high temperature to prevent swelling of a battery through suppression of gas generation, thereby having excellent high-temperature storage characteristics and excellent discharge characteristics at a low temperature while decreasing a thickness increase rate of the battery, and a high-voltage lithium secondary battery containing the same.

Electrolyte for lithium secondary battery and lithium secondary battery comprising same

Provided are a fluoreneol-based monomer, a polymer for preparing a resist underlayer film obtained therefrom, a resist underlayer film composition containing the polymer, and a method for forming a resist underlayer film using the resist underlayer film composition, wherein the fluoreneol-based monomer is represented by Chemical Formula 2 below: 

Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for forming resist underlayer film using the composition

Growing community of inventors

Daejeon, South Korea

Jin Su Ham