Samsung Electronics Co., Ltd.

Jin-sook Choi

Bo-un Yoon

Chang-ki Hong

Hong-soo Kim

Byoung-ho Kwon

Sang-youn Jo

Se-rah Yun

Jae-pil Shin

Moon-hyun Yoo

Jong-Bae Lee

In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral region surrounding the cell region, a plurality of dummy active regions surrounded by a device isolating region and formed apart from each other, and a plurality of dummy gate parts formed on the dummy active regions and on the device isolating regions located between the dummy active regions, wherein each of the dummy gate parts covers two or more of the dummy active regions.

Semiconductor device including dummy gate part and method of fabricating the same

A mask set with a light-transmitting region of a controlled size includes a plurality of masks for performing in-situ synthesis on probes of a microarray, wherein each mask includes a light-transmitting region and a light-blocking region, and the size of the light-transmitting region is equal to or greater than about 5% of the total size of the light-transmitting and light-blocking regions.

Mask set for microarray, method of fabricating mask set, and method of fabricating microarray using mask set

Growing community of inventors

Suwon-si, South Korea

Jin-sook Choi