Samsung Electronics Co., Ltd.

Jin-soo Lim

Chang-seok Kang

Sung-Il Chang

Byeong-In Choe

A vertical structure nonvolatile memory device can include a channel layer that extends in a vertical direction on a substrate. A memory cell string includes a plurality of transistors that are disposed on the substrate in the vertical direction along a vertical sidewall of the channel layer. At least one of the plurality of transistors includes at least one recess in a gate of the transistor into which at least one protrusion, which includes the channel layer, extends.

Growing community of inventors

Yongin-si, North Korea

Jin-soo Lim