Samsung Electronics Co., Ltd.

Jin Soak Kim

Toshiro Nakanishi

Suhwan Kim

Donghwan Kim

Taehyun An

Sungkweon Baek

Gabjin Nam

Eunae Chung

Yubin Kim

Dong Hwan Kim

Su Hwan Kim

Sung Kweon Baek

Eun Ae Chung

Gab Jin Nam

Tae Hyun An

A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.

Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same

Static random access memory (SRAM) cells including vertical channel transistors

There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).

Method of manufacturing semiconductor device

Growing community of inventors

Seoul, South Korea

Jin Soak Kim