Up Chemical Co., Ltd.

Jin Sik Kim

Jun Hwan Choi

Byung Kwan Kim

Myeong Ho Kim

Dae-Young Kim

Sungwoo Ahn

Jun Young Kim

Da Som Yu

Bo Yearn Cho

Yun Gyeong Yi

Young Seop Kim

Mi Hee Lee

Bum Soo Kim

Hyun Koock Shin

In Jae Lee

The present disclosure relates to an aluminum compound, an aluminum-containing film-forming precursor composition including the aluminum compound, and a method of preparing an aluminum-containing film using the aluminum-containing film-forming precursor composition.

Aluminum precursor compound, production method therefor, and aluminum containing layer forming method using same

A silicon precursor compound, a preparation method therefor, a silicon-containing film formation composition containing the silicon precursor compound are disclosed. A method for forming a silicon-containing film by using the silicon-containing film formation composition is also disclosed. The silicon-containing film formation composition contains a silicon precursor compound having a specific structure so that the thickness of a silicon-containing film can be controlled to be very thin through atomic layer deposition (ALD), and, when a silicon-containing composite film is formed by combining an ALD cycle that forms a silicon-containing film and an ALD cycle that forms a film containing another metal, the silicon amount of the silicon-containing composite film can be finely controlled to be in a low range.

Silicon precursor compound, silicon-containing film formation composition comprising same, and method for forming film by using silicon-containing film formation composition

The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Silicon precursor compound, preparation method therefor, and silicon-containing film formation method using same

A method for the vapor deposition of aluminum films is provided. Such method employs a dialkyl amido dihydroaluminum compound of the formula [HAlNRR]wherein Rand Rare the same or different alkyl groups having 1 to 3 carbons, and n is an integer of 2 or 3. The aluminum films may be thick or thin and may be aluminum films or may be mixed metal films with aluminum metal. Both CVD and ALD methods may be employed.

Method for thin film vapor deposition of a dialkyl amido dihydroaluminum compound

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Pyeongtaek-si, South Korea

Jin Sik Kim