Truelight Corporation

Jin-Shan Pan

Chih-Cheng Chen

Cheng-Ju Wu

Hung-Ching Lai

Chang-Cherng Wu

Shang-Cheng Liu

Borlin Lee

Hsiu-Ming Hsieh

Chun-Han Wu

Po-Han Chen

A chip array structure for laser diodes, formed on an active surface of a semiconductor chip produced from a semiconductor process includes a plurality of light-emitting elements in an array arrangement, at least one insulation wall, at least two wire bond areas and a plurality of connection electrodes. The insulation wall separates the light-emitting elements into at least two light-emitting districts. The wire bond areas are positioned respective to the corresponding light-emitting districts. The connection electrodes electrically couple the wire bond areas with the corresponding light-emitting districts. The wire bond areas have independent electrodes, and the light-emitting districts are electrically isolated by the insulation wall.

Chip array structure for laser diodes and packaging device for the same

A submount is used for disposing an illuminant element or a light-receiving element having an optical axis. The submount is disposed at a plane and has a main body. The main body includes a first surface and a second surface. The first surface is approximately parallel to the plane and far away from the plane. The second surface is approximately parallel to the plane and adjacent to the plane. A disposing part of the first surface is tilted with respect to the second surface at a predetermined angle. The illuminant element or the light-receiving element is disposed on the disposing part. The optical axis of the illuminant element or the light-receiving element is tiled with respect to a normal of the second surface at the predetermined angle.

Inputting module and submount thereof and manufacturing method of the submount

A light source unit is disclosed for arranging on a plane and emitting a light beam oblique to the plane. The light source unit includes an illuminant element and a transparent encapsulator. The illuminant element has an upper surface and a lower surface both parallel to the plane. The transparent encapsulator physically contacts with the illuminant element and at least covers the upper surface of the illuminant element. The transparent encapsulator has an oblique surface above the upper surface and oblique to the upper surface. In addition, an optical inputting module having the light source unit mentioned above is disclosed.

Optical inputting module of an electronic device for sensing movement of object and its light source unit

The present invention discloses a manufacturing method of vertical cavity surface emitting laser. The method includes following steps: providing a substrate; forming an epitaxial layer stack including an aluminum-rich layer; forming an ion-doping mask including a ring-shaped opening; doping ions in the epitaxial layer stack through the ring-shaped opening and forming a ring-shaped ion-doped region over the aluminum-rich layer; forming an etching mask on the ion-doping mask for covering the ring-shaped opening of the ion-doping mask; etching the epitaxial layer stack through the etching mask and ion-doping mask for forming an island platform; oxidizing the aluminum-rich layer for forming a ring-shaped oxidized region. In addition, the present invention also discloses a vertical cavity surface emitting laser manufactured by the above mentioned method.

Vertical cavity surface emitting laser and manufacturing method thereof

A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens.

Dual wavelength laser device for optical communication

A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

Growing community of inventors

Hsinchu, Taiwan

Jin-Shan Pan